- 专利标题： Film deposition apparatus for fine pattern forming
-
申请号： US17808375申请日： 2022-06-23
-
公开(公告)号： US11881379B2公开(公告)日： 2024-01-23
- 发明人: Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa , Hiroki Murakami
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： IPUSA, PLLC
- 优先权： JP 08251679 2008.09.29 JP 09206443 2009.09.07
- 分案原申请号： US12567834 2009.09.28
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; C23C16/02 ; C23C16/40 ; C23C16/455 ; H01L21/02 ; H01L21/033 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; H01L21/316 ; G03F7/40 ; H01L21/027
摘要：
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
公开/授权文献
- US20220328301A1 FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING 公开/授权日：2022-10-13
信息查询
