公开(公告)号：US12288671B2

公开(公告)日：2025-04-29

申请号：US18524767

申请日：2023-11-30

Applicant: Tokyo Electron Limited

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa ,  Hiroki Murakami

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US11380538B2

公开(公告)日：2022-07-05

申请号：US16738257

申请日：2020-01-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Murakami

IPC: H01L21/02

Abstract: A nitride film forming method includes repeating a cycle a plurality of times, wherein the cycle includes: forming a layer containing an element to be nitrided on a substrate by supplying a source gas including the element to the substrate; plasmarizing a modifying gas including a hydrogen gas, and modifying the layer containing the element with the plasmarized modifying gas; and activating a nitriding gas including nitrogen by heat, and thermally nitriding the layer containing the element with the nitriding gas activated by heat.

公开(公告)号：US10304676B2

公开(公告)日：2019-05-28

申请号：US15660394

申请日：2017-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro Miyahara ,  Daisuke Suzuki ,  Hiroki Murakami

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02 ,  H01L21/32 ,  H01L29/49 ,  H01L29/66 ,  C23C16/455 ,  H01L21/285 ,  H01L21/311

Abstract: A method for forming a nitride film is provided. The method includes preparing a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and a second base film formed of a material having a relatively short incubation time with respect to a nitride film, forming a nitride film on the substrate by means of ALD or CVD using a raw material gas and a nitriding gas while heating the substrate to a predetermined temperature, and etching nitride on the first base film to be removed by supplying an etching gas to thereby expose a film surface of the first base film, wherein the forming the nitride film and the etching the nitride are repeatedly performed a predetermined number of times to selectively form the nitride film on the second base film.

公开(公告)号：US09472394B2

公开(公告)日：2016-10-18

申请号：US14154341

申请日：2014-01-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Murakami ,  Toshiyuki Ikeuchi ,  Jun Sato ,  Yuichiro Morozumi

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/321 ,  H01L21/677

CPC classification number: H01L21/02238 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/32105 ,  H01L21/67757

Abstract: A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed.

Abstract translation: 形成氧化硅膜的方法包括在基底上形成硅膜，将基底作为被处理物的被处理面，通过氧化硅膜在基底上形成氧化硅膜。 在形成硅膜和形成氧化硅膜之间，进行将其上形成有硅膜的被处理物暴露于至少含有氧化成分的气氛。

公开(公告)号：US09390912B2

公开(公告)日：2016-07-12

申请号：US14167650

申请日：2014-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Murakami ,  Koji Sasaki ,  Keisuke Suzuki ,  Yuichiro Morozumi

IPC: C23C16/36 ,  C23C16/40 ,  H01L21/02 ,  C23C16/455 ,  C23C16/30

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/45544 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219

Abstract: A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more.

Abstract translation: 一种用于在可抽空处理容器内的工件表面上形成由至少含有硅（Si），氧（O），碳（C）和氮（N）的SiOCN层构成的薄膜的成膜方法， 硅烷类气体，烃类气体，氮化气体或氧化性气体，包括形成至少包含Si，C和N的第一膜，形成至少包含Si，C和O的第二膜。形成第一膜和 形成第二膜被设置为循环，并且循环执行一次或多次。

公开(公告)号：US11881379B2

公开(公告)日：2024-01-23

申请号：US17808375

申请日：2022-06-23

Applicant: Tokyo Electron Limited

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa ,  Hiroki Murakami

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/316 ,  G03F7/40 ,  H01L21/027

CPC classification number: H01J37/32091 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/027 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/32139 ,  H01L21/76816

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US10672617B2

公开(公告)日：2020-06-02

申请号：US15937260

申请日：2018-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Murakami ,  Takahiro Miyahara

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/02

Abstract: There is provided an etching method which includes supplying an etching gas including an H2 gas or an NH3 gas to a target substrate having a germanium portion in an excited state; and etching the germanium portion.

公开(公告)号：US10312078B2

公开(公告)日：2019-06-04

申请号：US15466264

申请日：2017-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Murakami ,  Daisuke Suzuki ,  Takahiro Miyahara

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/46 ,  C23C16/02 ,  C23C16/04

Abstract: There is provided a nitride film forming method which includes: performing a pretreatment in which a chlorine-containing gas is supplied while heating a substrate to be processed having a first base film and a second base film formed on the substrate to a predetermined temperature, and is adsorbed onto a surface of the first base film and a surface of the second base film; and forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature.

公开(公告)号：US10176992B2

公开(公告)日：2019-01-08

申请号：US13848849

申请日：2013-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa ,  Hiroki Murakami

IPC: C23C16/455 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/02 ,  H01L21/768 ,  H01L21/316 ,  H01L21/311 ,  C23C16/02 ,  G03F7/40 ,  C23C16/40 ,  H01L21/033

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US09972486B2

公开(公告)日：2018-05-15

申请号：US15465789

申请日：2017-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Murakami ,  Takahiro Miyahara ,  Daisuke Suzuki

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/52 ,  H01L21/02211 ,  H01L21/0228

Abstract: There is provided a method for forming a nitride film on a substrate to be processed by a thermal ALD which repeats: supplying a film forming raw material gas to the substrate to be processed while heating the substrate to be processed to a predetermined temperature; and supplying a nitriding gas to the substrate to be processed, the nitride film forming method comprises supplying a chlorine-containing gas to the substrate to be processed after the supplying the film forming raw material gas.