Invention Application
- Patent Title: Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
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Application No.: US09871958Application Date: 2001-06-04
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Publication No.: US20010023660A1Publication Date: 2001-09-27
- Inventor: Zhiyi Yu , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
- Applicant: MOTOROLA, INC.
- Applicant Address: US IL Schaumburg
- Assignee: MOTOROLA, INC.
- Current Assignee: MOTOROLA, INC.
- Current Assignee Address: US IL Schaumburg
- Main IPC: C30B025/00
- IPC: C30B025/00 ; C30B023/00 ; C30B028/12 ; C30B028/14
Abstract:
A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
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