公开(公告)号：US20010023660A1

公开(公告)日：2001-09-27

申请号：US09871958

申请日：2001-06-04

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Daniel Overgaard ,  Jamal Ramdani ,  Jay A. Curless ,  Jerald A. Hallmark ,  William J. Ooms ,  Jun Wang

IPC: C30B025/00 ,  C30B023/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/30

Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.