- 专利标题： Opposed terminal structure having a nitride semiconductor element
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申请号： US11115247申请日： 2005-04-27
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公开(公告)号： US20050211993A1公开(公告)日： 2005-09-29
- 发明人: Masahiko Sano , Mitsuhiro Nonaka , Kazumi Kamada , Masashi Yamamoto
- 申请人： Masahiko Sano , Mitsuhiro Nonaka , Kazumi Kamada , Masashi Yamamoto
- 优先权： JP19192/2002 20020128; JP195179/2002 20020703; JP356463/2002 20021209; JP175686/2002 20020617; JP233866/2002 20020809
- 主分类号： H01L33/62
- IPC分类号： H01L33/62 ; H01L27/15 ; H01L29/16 ; H01L29/26 ; H01L33/00 ; H01L33/06 ; H01L33/10 ; H01L33/20 ; H01L33/22 ; H01L33/32 ; H01L33/38 ; H01L33/40 ; H01L33/44 ; H01S5/00 ; H01S5/02 ; H01S5/022 ; H01S5/024 ; H01S5/042 ; H01S5/183 ; H01S5/30 ; H01S5/343
摘要：
An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
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