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公开(公告)号:US20050211993A1
公开(公告)日:2005-09-29
申请号:US11115247
申请日:2005-04-27
IPC分类号: H01L33/62 , H01L27/15 , H01L29/16 , H01L29/26 , H01L33/00 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/343
CPC分类号: H01L33/405 , B82Y20/00 , H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/46 , H01L2224/45144 , H01L2224/48091 , H01L2224/49113 , H01L2933/0016 , H01S2304/12 , H01L2924/00 , H01L2924/00014
摘要: An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
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2.
公开(公告)号:US07049635B2
公开(公告)日:2006-05-23
申请号:US11115247
申请日:2005-04-27
IPC分类号: H01L27/15
CPC分类号: H01L33/405 , B82Y20/00 , H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/46 , H01L2224/45144 , H01L2224/48091 , H01L2224/49113 , H01L2933/0016 , H01S2304/12 , H01L2924/00 , H01L2924/00014
摘要: An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
摘要翻译: 一种相对的端子结构,包括支撑衬底,第一端子,具有发光层的氮化物半导体和第二端子。 第二端子形成具有第一端子的相对的端子结构,其可以以各种图案形成。
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3.
公开(公告)号:US06946683B2
公开(公告)日:2005-09-20
申请号:US10950472
申请日:2004-09-28
IPC分类号: H01L33/62 , H01L27/15 , H01L29/16 , H01L29/26 , H01L33/00 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/343
CPC分类号: H01L33/405 , B82Y20/00 , H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/46 , H01L2224/45144 , H01L2224/48091 , H01L2224/49113 , H01L2933/0016 , H01S2304/12 , H01L2924/00 , H01L2924/00014
摘要: An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
摘要翻译: 一种相对的端子结构,包括支撑衬底,第一端子,具有发光层的氮化物半导体和第二端子。 第二端子形成具有第一端子的相对的端子结构,其可以以各种图案形成。
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公开(公告)号:US06744071B2
公开(公告)日:2004-06-01
申请号:US10351497
申请日:2003-01-27
IPC分类号: H01L2715
CPC分类号: H01L33/405 , B82Y20/00 , H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/46 , H01L2224/45144 , H01L2224/48091 , H01L2224/49113 , H01L2933/0016 , H01S2304/12 , H01L2924/00 , H01L2924/00014
摘要: A highly efficient nitride semiconductor element having an opposed terminal structure, whose terminals face each other. The nitride semiconductor element includes a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, on a supporting substrate successively. The first terminal and a first insulating protect layer are interposed between the conductive layer and a first conductive type nitride semiconductor layer of the nitride semiconductor.
摘要翻译: 具有端子彼此面对的具有相对端子结构的高效氮化物半导体元件。 氮化物半导体元件依次包括导电层,第一端子,具有发光层的氮化物半导体和第二端子。 第一端子和第一绝缘保护层插入在氮化物半导体的导电层和第一导电型氮化物半导体层之间。
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公开(公告)号:US06916676B2
公开(公告)日:2005-07-12
申请号:US10614778
申请日:2003-07-09
IPC分类号: H01L33/62 , H01L27/15 , H01L29/16 , H01L29/26 , H01L33/00 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/343 , H01L21/00
CPC分类号: H01L33/405 , B82Y20/00 , H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/46 , H01L2224/45144 , H01L2224/48091 , H01L2224/49113 , H01L2933/0016 , H01S2304/12 , H01L2924/00 , H01L2924/00014
摘要: A method of producing an efficient nitride semiconductor element having an opposed terminal structure. The method includes a growing step for growing the nitride semiconductor further having an undoped GaN layer on a different materials substrate; subsequently, an attaching step for attaching the supporting substrate to the first conductive type nitride semiconductor layer side of the nitride semiconductor and interposing a first terminal between them; and subsequently, an exposing step for exposing the second conductive type nitride semiconductor layer by eliminating the different material substrate and the undoped GaN.
摘要翻译: 一种制造具有相对端子结构的有效氮化物半导体元件的方法。 该方法包括用于在不同材料衬底上生长具有未掺杂的GaN层的氮化物半导体的生长步骤; 随后,将支撑衬底附接到氮化物半导体的第一导电氮化物半导体层侧并在它们之间插入第一端子的附接步骤; 并且随后,通过消除不同的材料衬底和未掺杂的GaN来暴露第二导电氮化物半导体层的曝光步骤。
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公开(公告)号:US20050035364A1
公开(公告)日:2005-02-17
申请号:US10950472
申请日:2004-09-28
IPC分类号: H01L33/62 , H01L27/15 , H01L29/16 , H01L29/26 , H01L33/00 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/343
CPC分类号: H01L33/405 , B82Y20/00 , H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/46 , H01L2224/45144 , H01L2224/48091 , H01L2224/49113 , H01L2933/0016 , H01S2304/12 , H01L2924/00 , H01L2924/00014
摘要: An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
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