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    Nitride Semiconductor Device Comprising Bonded Substrate and Fabrication Method of the Same
    7.
    发明申请
    Nitride Semiconductor Device Comprising Bonded Substrate and Fabrication Method of the Same 有权
    包含粘结基板的氮化物半导体器件及其制造方法

    公开(公告)号：US20080296609A1

    公开(公告)日：2008-12-04

    申请号：US12113030

    申请日：2008-04-30

    申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

    摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

    Nitride semiconductor device comprising bonded substrate and fabrication method of the same
    9.
    发明授权
    Nitride semiconductor device comprising bonded substrate and fabrication method of the same 有权
    包含键合衬底的氮化物半导体器件及其制造方法

    公开(公告)号：US07378334B2

    公开(公告)日：2008-05-27

    申请号：US11344197

    申请日：2006-02-01

    申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    IPC分类号： H01L21/20

    CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

    摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。 在p型氮化物半导体层8上形成包含多于一个金属层的第一结合层。 具有第一面和第二面的支撑衬底的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于用于生长氮化物半导体的衬底1的热膨胀系数。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

    Nitride semiconductor device comprising bonded substrate and fabrication method of the same
    10.
    发明授权
    Nitride semiconductor device comprising bonded substrate and fabrication method of the same 有权
    包含键合衬底的氮化物半导体器件及其制造方法

    公开(公告)号：US07105857B2

    公开(公告)日：2006-09-12

    申请号：US10614342

    申请日：2003-07-08

    申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

    IPC分类号： H01L31/12

    CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

    摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。