发明申请
- 专利标题： BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： 双极半导体器件及其制造方法
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申请号： US13060697申请日： 2009-08-25
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公开(公告)号： US20110169015A1公开(公告)日： 2011-07-14
- 发明人: Yuki Negoro , Akihiko Horiuchi , Kensuke Iwanaga , Seiichi Yokoyama , Hideki Hashimoto , Kenichi Nonaka , Yusuke Maeyama , Masashi Sato , Masaaki Shimizu
- 申请人： Yuki Negoro , Akihiko Horiuchi , Kensuke Iwanaga , Seiichi Yokoyama , Hideki Hashimoto , Kenichi Nonaka , Yusuke Maeyama , Masashi Sato , Masaaki Shimizu
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： HONDA MOTOR CO., LTD.,SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人： HONDA MOTOR CO., LTD.,SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 优先权： JP2008-217391 20080826
- 国际申请： PCT/JP2009/064776 WO 20090825
- 主分类号： H01L29/161
- IPC分类号： H01L29/161 ; H01L21/56
摘要：
Disclosed is a bipolar semiconductor device which is capable of reducing the surface state density of a bipolar transistor and increasing the current gain of the transistor, thereby improving the transistor performance. A bipolar semiconductor device (100) has a surface protective film (30) on the surface of a semiconductor element. The surface protective film is composed of a thermal oxide film (31) formed on the surface of the semiconductor element, and a deposited oxide film (32) formed on the thermal oxide film. The deposited oxide film contains at least one of hydrogen element and nitrogen element in an amount of not less than 1018 cm−3.
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