摘要:
Disclosed is a bipolar semiconductor device which is capable of reducing the surface state density of a bipolar transistor and increasing the current gain of the transistor, thereby improving the transistor performance. A bipolar semiconductor device (100) has a surface protective film (30) on the surface of a semiconductor element. The surface protective film is composed of a thermal oxide film (31) formed on the surface of the semiconductor element, and a deposited oxide film (32) formed on the thermal oxide film. The deposited oxide film contains at least one of hydrogen element and nitrogen element in an amount of not less than 1018 cm−3.
摘要:
Disclosed is a semiconductor device comprising a p-type SiC semiconductor and an ohmic electrode having an Ni/Al laminated structure provided on the p-type SiC semiconductor. The semiconductor device simultaneously has improved contact resistance and surface roughness in the ohmic electrode. The semiconductor device comprises an ohmic electrode (18) comprising a nickel (Ni) layer (21), a titanium (Ti) layer (22), and an aluminum (Al) layer (23) stacked in that order on a p-type silicon carbide semiconductor region (13). The ohmic electrode (18) comprises 14 to 47 atomic % of a nickel element, 5 to 12 atomic % of titanium element, and 35 to 74 atomic % of an aluminum element, provided that the atomic ratio of the nickel element to the titanium element is 1 to 11.
摘要:
A method of manufacturing a semiconductor device, includes increasing adherence between a susceptor as a heating element, and a semiconductor substrate disposed on the susceptor, by using an adherence increasing mechanism, or increasing heat transmitted to a semiconductor substrate, which is disposed on a susceptor as a heating element, by using a transmitted-heat increasing mechanism; and heating the semiconductor substrate to have a predetermined temperature by heating the susceptor. The adherence increasing mechanism may include the susceptor and one of a heavy-weight stone disposed on the semiconductor substrate, a cap disposed on the semiconductor substrate and engaged with the susceptor, and an adhesive layer provided between the susceptor and the semiconductor substrate. The transmitted-heat increasing mechanism may include the susceptor and small pieces which are disposed on the semiconductor substrate and have radiated-light absorption ability. The susceptor may hold a plurality of the semiconductor substrates in a stacked form.
摘要:
A method of manufacturing a semiconductor device, includes increasing adherence between a susceptor as a heating element, and a semiconductor substrate disposed on the susceptor, by using an adherence increasing mechanism, or increasing heat transmitted to a semiconductor substrate, which is disposed on a susceptor as a heating element, by using a transmitted-heat increasing mechanism; and heating the semiconductor substrate to have a predetermined temperature by heating the susceptor. The adherence increasing mechanism may include the susceptor and one of a heavy-weight stone disposed on the semiconductor substrate, a cap disposed on the semiconductor substrate and engaged with the susceptor, and an adhesive layer provided between the susceptor and the semiconductor substrate. The transmitted-heat increasing mechanism may include the susceptor and small pieces which are disposed on the semiconductor substrate and have radiated-light absorption ability. The susceptor may hold a plurality of the semiconductor substrates in a stacked form.
摘要:
A semiconductor device includes: a passivation film; a first semiconductor layer that has a first main component of 4H—SiC of a first conductivity type; and a second semiconductor layer that has a second main component of 4H—SiC of a second conductivity type. The second semiconductor layer has a pn-junction with the first semiconductor layer. The pn-junction has a junction edge. The first and second semiconductor layers further include a local area that includes the junction edge. The local area has a first principal plane that interfaces with the passivation film. A normal to the first principal plane tilts by a first tilt angle in a range of 25 degrees to 45 degrees from a first axis of [0001] or [000-1] toward a second axis of .
摘要:
An object recognizing device for recognizing an object by transmitting laser light from a laser light source and receiving reflected light from the object by a light sensor, wherein the laser light source and the light sensor are disposed at a relative vertical distance of not less than 20 cm therebetween with a divergence angle .theta..sub.1 of the laser radiation emitted from the laser light source being set at a value of not more than 5 mrad and being smaller than an angle .alpha. formed between an optical axis of the laser light and an optical axis of the reflected light entering into the light sensor, and which is, therefore, capable of effectively recognizing any object even in an atmosphere containing aerosol, e.g., fog or haze.
摘要:
Provided is a method of joining members having different thermal expansion coefficients, capable of joining them at a temperature lower than the melting point of Ag to obtain a joining layer having excellent durability to a thermal cycle. First Ag particles 3 having an average particle diameter of 50 nm or less and an Ag foil 4 or metal foil 4 having a smaller modulus of longitudinal elasticity than that of Ag are placed between two types of members 1 and 2 at least one of which has a lower thermal expansion coefficient than that of Ag, heated to join the members 1 and 2. A wax material 3, which is a powder mixture containing first Ag particles having an average particle diameter of 50 nm or less and second Ag particles or particles of a metal (having a modulus of longitudinal elasticity than that of Ag) having an average particle diameter of 20 μm or more and being contained in a volume fraction of 10 to 40% relative to a total volume of the powder mixture, is placed between the two types of members 1 and 2, heated to join the members 1 and 2. The metal foil 4 and the particles of a metal have an Ag coating layer on a surface thereof. The first member 1 is formed of one type of material selected from the group consisting of Si, SiC, Al2O3, AlN and Si3N4 and the second member is formed of Al or Cu.
摘要翻译:提供了一种接合具有不同热膨胀系数的构件的方法,其能够在低于Ag的熔点的温度下接合它们,以获得对热循环具有优异的耐久性的接合层。 平均粒径为50nm以下的第一Ag粒子3和纵向弹性模量比Ag小的Ag箔4或金属箔4放置在两种类型的构件1和2之间,其中至少一个具有 热膨胀系数比Ag的热膨胀系数低,被加热以接合构件1和2.作为粉末混合物的蜡材料3,其是含有平均粒径为50nm以下的第一Ag粒子和第二Ag粒子或第二Ag粒子 平均粒径为20μm以上的金属(纵向弹性模量比Ag的弹性模量)相对于粉末混合物的总体积的体积分数为10〜40% 两种类型的构件1和2被加热以接合构件1和2.金属箔4和金属颗粒在其表面上具有Ag涂层。 第一构件1由选自Si,SiC,Al 2 O 3 3,AlN和Si 3 N 3的一种材料形成。 > N 4,并且第二构件由Al或Cu形成。
摘要:
A power semiconductor module having an integral circuit board with a metal substrate electrode, an insulation substrate and a heat sink joined is disclosed. A SiC semiconductor power device is joined to a top of the metal substrate electrode of the circuit board. A difference in average coefficients of thermal expansion between constituent materials of the circuit board in a temperature range from room to joining time temperatures is 2.0 ppm/° C. or less, and a difference in expansion, produced by a difference between a lowest operating temperature and a joining temperature, of the circuit-board constituent materials is 2,000 ppm or less.
摘要:
A distance measuring system for measuring a distance between two objects has a transmitter assembly mounted on one of the two objects, for transmitting a plurality of electromagnetic waves having respective wavelengths different from each other at respective levels toward the other of the two objects, a receiver assembly mounted on the other object, for receiving the electromagnetic waves transmitted from the transmitting means, and a distance detector for detecting a ratio of levels at which at least one set of electromagnetic waves of the electromagnetic waves is received by the receiving means, as corresponding to a distance between the two objects, and determining the distance between the two objects from the ratio.
摘要:
A static induction semiconductor device has a low-resistance drain region, a high-resistance layer disposed on the drain region, a low-resistance source region spaced from the high-resistance layer, a low-resistance gate region disposed in the high-resistance layer, and a hetero layer disposed in an interface between the high-resistance layer and the source region and an interface between the gate region and a surface protective layer on the gate and source regions. The hetero layer, which may be made of AlGaAs, has a band gap larger than a semiconductor crystal such as GaAs of the drain, source, and gate regions. The static induction semiconductor device has a low resistance turned on and can operate in a bipolar mode.