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公开(公告)号:US20110169015A1
公开(公告)日:2011-07-14
申请号:US13060697
申请日:2009-08-25
申请人: Yuki Negoro , Akihiko Horiuchi , Kensuke Iwanaga , Seiichi Yokoyama , Hideki Hashimoto , Kenichi Nonaka , Yusuke Maeyama , Masashi Sato , Masaaki Shimizu
发明人: Yuki Negoro , Akihiko Horiuchi , Kensuke Iwanaga , Seiichi Yokoyama , Hideki Hashimoto , Kenichi Nonaka , Yusuke Maeyama , Masashi Sato , Masaaki Shimizu
IPC分类号: H01L29/161 , H01L21/56
CPC分类号: H01L29/732 , H01L23/3171 , H01L23/3192 , H01L29/045 , H01L29/1608 , H01L29/42304 , H01L29/6606 , H01L29/66068 , H01L29/6609 , H01L29/66295 , H01L29/66416 , H01L29/7722 , H01L29/8613 , H01L2224/06181 , H01L2924/1305 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要: Disclosed is a bipolar semiconductor device which is capable of reducing the surface state density of a bipolar transistor and increasing the current gain of the transistor, thereby improving the transistor performance. A bipolar semiconductor device (100) has a surface protective film (30) on the surface of a semiconductor element. The surface protective film is composed of a thermal oxide film (31) formed on the surface of the semiconductor element, and a deposited oxide film (32) formed on the thermal oxide film. The deposited oxide film contains at least one of hydrogen element and nitrogen element in an amount of not less than 1018 cm−3.
摘要翻译: 公开了能够降低双极晶体管的表面状态密度并增加晶体管的电流增益的双极半导体器件,从而提高晶体管的性能。 双极半导体器件(100)在半导体元件的表面上具有表面保护膜(30)。 表面保护膜由形成在半导体元件的表面上的热氧化膜(31)和形成在热氧化膜上的沉积氧化物膜(32)构成。 沉积的氧化物膜含有不少于1018cm-3的氢元素和氮元素中的至少一种。
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公开(公告)号:US20070256626A1
公开(公告)日:2007-11-08
申请号:US11659339
申请日:2005-08-31
IPC分类号: C30B23/00 , H01L21/205 , G05D16/00
CPC分类号: H01L21/02378 , C30B25/02 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , Y10T117/1008
摘要: A process for growing a crystal of a nitride semiconductor in which after the step of mounting a substrate (12) in a reaction tube (11), the step of feeding a first material gas containing a Group 3 element onto the substrate in the reaction tube and the step of feeding a second material gas containing elemental nitrogen onto the substrate in the reaction tube are carried out alternately to deposit a nitride semiconductor crystal directly on the substrate. The number of moles of the elemental nitrogen contained in the second material gas has a ratio of 200 or more to the number of moles of the Group 3 element in the first material gas.
摘要翻译: 一种用于生长氮化物半导体的晶体的方法,其中在将反应管(11)中安装基板(12)的步骤之后,将包含第3族元素的第一原料气体进料到反应管中的基板上 并且在反应管中将含有元素氮的第二原料气体进料到基板上的步骤交替地进行,以将氮化物半导体晶体直接沉积在基板上。 第二原料气体中所含的元素氮的摩尔数与第一原料气体中的第三族元素的摩尔数相比为200以上。
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公开(公告)号:US08529697B2
公开(公告)日:2013-09-10
申请号:US11659339
申请日:2005-08-31
IPC分类号: C30B25/00
CPC分类号: H01L21/02378 , C30B25/02 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , Y10T117/1008
摘要: A process for growing a crystal of a nitride semiconductor in which after the step of mounting a substrate (12) in a reaction tube (11), the step of feeding a first material gas containing a Group 3 element onto the substrate in the reaction tube and the step of feeding a second material gas containing elemental nitrogen onto the substrate in the reaction tube are carried out alternately to deposit a nitride semiconductor crystal directly on the substrate. The number of moles of the elemental nitrogen contained in the second material gas has a ratio of 200 or more to the number of moles of the Group 3 element in the first material gas.
摘要翻译: 一种用于生长氮化物半导体的晶体的方法,其中在将反应管(11)中安装基板(12)的步骤之后,将包含第3族元素的第一原料气体进料到反应管中的基板上 并且在反应管中将含有元素氮的第二原料气体进料到基板上的步骤交替地进行,以将氮化物半导体晶体直接沉积在基板上。 第二原料气体中所含的元素氮的摩尔数与第一原料气体中的第三族元素的摩尔数相比为200以上。
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