公开(公告)号：US20110169015A1

公开(公告)日：2011-07-14

申请号：US13060697

申请日：2009-08-25

申请人： Yuki Negoro ,  Akihiko Horiuchi ,  Kensuke Iwanaga ,  Seiichi Yokoyama ,  Hideki Hashimoto ,  Kenichi Nonaka ,  Yusuke Maeyama ,  Masashi Sato ,  Masaaki Shimizu

发明人： Yuki Negoro ,  Akihiko Horiuchi ,  Kensuke Iwanaga ,  Seiichi Yokoyama ,  Hideki Hashimoto ,  Kenichi Nonaka ,  Yusuke Maeyama ,  Masashi Sato ,  Masaaki Shimizu

IPC分类号： H01L29/161 ,  H01L21/56

CPC分类号： H01L29/732 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/42304 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/6609 ,  H01L29/66295 ,  H01L29/66416 ,  H01L29/7722 ,  H01L29/8613 ,  H01L2224/06181 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00

摘要： Disclosed is a bipolar semiconductor device which is capable of reducing the surface state density of a bipolar transistor and increasing the current gain of the transistor, thereby improving the transistor performance. A bipolar semiconductor device (100) has a surface protective film (30) on the surface of a semiconductor element. The surface protective film is composed of a thermal oxide film (31) formed on the surface of the semiconductor element, and a deposited oxide film (32) formed on the thermal oxide film. The deposited oxide film contains at least one of hydrogen element and nitrogen element in an amount of not less than 1018 cm−3.

摘要翻译： 公开了能够降低双极晶体管的表面状态密度并增加晶体管的电流增益的双极半导体器件，从而提高晶体管的性能。 双极半导体器件（100）在半导体元件的表面上具有表面保护膜（30）。 表面保护膜由形成在半导体元件的表面上的热氧化膜（31）和形成在热氧化膜上的沉积氧化物膜（32）构成。 沉积的氧化物膜含有不少于1018cm-3的氢元素和氮元素中的至少一种。

公开(公告)号：US20110095398A1

公开(公告)日：2011-04-28

申请号：US12908542

申请日：2010-10-20

申请人： Kenichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Akihiko HORIUCHI ,  Yuki NEGORO ,  Norio TSUYUGUCHI ,  Takeshi ASADA ,  Masaaki SHIMIZU

发明人： Kenichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Akihiko HORIUCHI ,  Yuki NEGORO ,  Norio TSUYUGUCHI ,  Takeshi ASADA ,  Masaaki SHIMIZU

IPC分类号： H01L29/417 ,  H01L21/8222

CPC分类号： H01L29/7322 ,  H01L29/0804 ,  H01L29/1608 ,  H01L29/41708 ,  H01L29/66068 ,  H01L29/66272

摘要： A bipolar semiconductor device includes a collector region that is an n-type low-resistance layer formed in one surface of a semiconductor crystal substrate, an n-type first high-resistance region on the collector region, a p-type base region on the first high-resistance region, an n-type low-resistance emitter region that is formed in another surface of the semiconductor crystal substrate, an n-type second high-resistance region between the emitter region and the base region so as to contact the emitter region, an n-type recombination suppressing region around the second high-resistance region so as to adjoin the second high-resistance region, and a p-type low-resistance base contact region which is provided so as to adjoin the recombination suppressing region, and which contacts the base region. Each of doping concentrations of the second high-resistance region and the recombination suppressing region is equal to or lower than 1×1017 cm−3.

摘要翻译： 双极半导体器件包括：集电极区域，其是形成在半导体晶体衬底的一个表面中的n型低电阻层，集电极区域上的n型第一高电阻区域， 第一高电阻区域，形成在半导体晶体衬底的另一表面中的n型低电阻发射极区域，在发射极区域和基极区域之间的n型第二高电阻区域，以便接触发射极 区域，以与第二高电阻区域相邻的第二高电阻区域周围的n型复合抑制区域和与复合抑制区域相邻设置的p型低电阻碱性接触区域， 并且其接触基部区域。 第二高电阻区域和复合抑制区域的掺杂浓度各自为1×1017cm-3以下。