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    SiC semiconductor device
    2.
    发明申请
    SiC semiconductor device 审中-公开
    SiC半导体器件

    公开(公告)号：US20060214268A1

    公开(公告)日：2006-09-28

    申请号：US11385762

    申请日：2006-03-22

    申请人： Yusuke Maeyama ,  Koichi Nishikawa ,  Yusuke Fukuda ,  Masaaki Shimizu ,  Masashi Satoh ,  Hiroaki Iwakuro ,  Kenichi Nonaka

    发明人： Yusuke Maeyama ,  Koichi Nishikawa ,  Yusuke Fukuda ,  Masaaki Shimizu ,  Masashi Satoh ,  Hiroaki Iwakuro ,  Kenichi Nonaka

    IPC分类号： H01L29/04

    CPC分类号： H01L29/045 ,  H01L21/046 ,  H01L21/0485 ,  H01L29/6606 ,  H01L29/66068

    摘要： A semiconductor device includes: a passivation film; a first semiconductor layer that has a first main component of 4H—SiC of a first conductivity type; and a second semiconductor layer that has a second main component of 4H—SiC of a second conductivity type. The second semiconductor layer has a pn-junction with the first semiconductor layer. The pn-junction has a junction edge. The first and second semiconductor layers further include a local area that includes the junction edge. The local area has a first principal plane that interfaces with the passivation film. A normal to the first principal plane tilts by a first tilt angle in a range of 25 degrees to 45 degrees from a first axis of [0001] or [000-1] toward a second axis of .

    摘要翻译： 一种半导体器件包括：钝化膜; 具有第一导电类型的4H-SiC的第一主要成分的第一半导体层; 以及具有第二导电类型的4H-SiC的第二主要成分的第二半导体层。 第二半导体层具有与第一半导体层的pn结。 pn结具有接合边缘。 第一和第二半导体层还包括包括接合边缘的局部区域。 局部区域具有与钝化膜相接的第一主平面。 第一主平面的法线在从[0001]或[000-1]的第一轴朝向<01-10>的第二轴的25度至45度的范围内倾斜第一倾斜角。

    SCHOTTKY BARRIER DIODE
    3.
    发明申请
    SCHOTTKY BARRIER DIODE 有权
    肖特基二极管二极管

    公开(公告)号：US20120228636A1

    公开(公告)日：2012-09-13

    申请号：US13410542

    申请日：2012-03-02

    申请人： Yusuke MAEYAMA ,  Ryohei Osawa ,  Yoshitaka Araki ,  Yoshiyuki Watanabe

    发明人： Yusuke MAEYAMA ,  Ryohei Osawa ,  Yoshitaka Araki ,  Yoshiyuki Watanabe

    IPC分类号： H01L29/161

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/1608

    摘要： A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers.

    摘要翻译： 在基板的第一表面（主表面）上的基板的周边区域中形成第三绝缘层，以跨越最靠近保护环层的第二半导体层和最靠近第二半导体层的第二半导体层。 换句话说，第三绝缘层被形成为覆盖暴露于基板的第一表面（主表面）并且位于第二半导体层之间的第一半导体层的一部分。 由此，第三绝缘层将金属层与暴露于基板的第一表面（主表面）并且位于第二半导体层之间的第一半导体层的部分电绝缘。

    Schottky barrier diode
    4.
    发明授权
    Schottky barrier diode 有权
    肖特基势垒二极管

    公开(公告)号：US08937319B2

    公开(公告)日：2015-01-20

    申请号：US13410542

    申请日：2012-03-02

    申请人： Yusuke Maeyama ,  Ryohei Osawa ,  Yoshitaka Araki ,  Yoshiyuki Watanabe

    发明人： Yusuke Maeyama ,  Ryohei Osawa ,  Yoshitaka Araki ,  Yoshiyuki Watanabe

    IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/16

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/1608

    摘要： A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers.

    摘要翻译： 在基板的第一表面（主表面）上的基板的周边区域中形成第三绝缘层，以跨越最靠近保护环层的第二半导体层和最靠近第二半导体层的第二半导体层。 换句话说，第三绝缘层被形成为覆盖暴露于基板的第一表面（主表面）并且位于第二半导体层之间的第一半导体层的一部分。 由此，第三绝缘层将金属层与暴露于基板的第一表面（主表面）并且位于第二半导体层之间的第一半导体层的部分电绝缘。