Invention Application
- Patent Title: CONTACT WRAP AROUND STRUCTURE
- Patent Title (中): 接缝结构结构
-
Application No.: US14673485Application Date: 2015-03-30
-
Publication No.: US20160148936A1Publication Date: 2016-05-26
- Inventor: Jeffrey Junhao XU , Stanley Seungchul SONG , Vladimir MACHKAOUTSAN , Mustafa BADAROGLU , Junjing BAO , John Jianhong ZHU , Da YANG , Choh Fei YEAP
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/16 ; H01L29/161 ; H01L29/24 ; H01L29/417 ; H01L29/08 ; H01L29/06 ; H01L29/51 ; H01L29/49 ; H01L29/66 ; H01L29/78 ; H01L29/423
Abstract:
A semiconductor device includes a gate stack. The semiconductor device also includes a wrap-around contact arranged around and contacting substantially all surface area of a regrown source/drain region of the semiconductor device proximate to the gate stack.
Public/Granted literature
- US09953979B2 Contact wrap around structure Public/Granted day:2018-04-24
Information query
IPC分类:
