- 专利标题： Via Connection to a Partially Filled Trench
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申请号： US14970242申请日： 2015-12-15
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公开(公告)号： US20170170110A1公开(公告)日： 2017-06-15
- 发明人: Shih-Ming Chang , Chih-Ming Lai , Ru-Gun Liu , Tsai-Sheng Gau , Chung-Ju Lee , Tien-I Bao , Shau-Lin Shue
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L21/321 ; H01L21/3105 ; H01L23/522 ; H01L21/768 ; H01L21/311
摘要：
A method includes forming a trench that is partially filled with a first metal material, the trench being formed within a first Interlayer Dielectric (ILD) layer, filling a remaining portion of the trench with a sacrificial material, depositing a buffer layer on the first ILD layer, patterning the buffer layer to form a hole within the buffer layer to expose the sacrificial material, and removing the sacrificial material.
公开/授权文献
- US09911623B2 Via connection to a partially filled trench 公开/授权日：2018-03-06
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