Invention Application
- Patent Title: MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
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Application No.: US15776902Application Date: 2016-11-18
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Publication No.: US20190019944A1Publication Date: 2019-01-17
- Inventor: Hideo Sato , Yoshihisa Horikawa , Shunsuke Fukami , Shoji Ikeda , Fumihiro Matsukura , Hideo Ohno , Tetsuo Endoh , Hiroaki Honjo
- Applicant: TOHOKU UNIVERSITY
- Priority: JP2015-225994 20151118
- International Application: PCT/JP2016/084372 WO 20161118
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; H01L43/02 ; G11C11/16

Abstract:
A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.
Public/Granted literature
- US11563169B2 Magnetic tunnel junction element and magnetic memory Public/Granted day:2023-01-24
Information query
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