公开(公告)号：US11563169B2

公开(公告)日：2023-01-24

申请号：US15776902

申请日：2016-11-18

Applicant: TOHOKU UNIVERSITY

Inventor： Hideo Sato ,  Yoshihisa Horikawa ,  Shunsuke Fukami ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Hideo Ohno ,  Tetsuo Endoh ,  Hiroaki Honjo

IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

Abstract: A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.

公开(公告)号：US20190019944A1

公开(公告)日：2019-01-17

申请号：US15776902

申请日：2016-11-18

Applicant: TOHOKU UNIVERSITY

Inventor： Hideo Sato ,  Yoshihisa Horikawa ,  Shunsuke Fukami ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Hideo Ohno ,  Tetsuo Endoh ,  Hiroaki Honjo

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.