Invention Application
- Patent Title: MEMORY DEVICE AND METHOD OF OPERATING THE SAME
-
Application No.: US16295932Application Date: 2019-03-07
-
Publication No.: US20190206690A1Publication Date: 2019-07-04
- Inventor: Hee Youl LEE
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si Gyeonggi-do
- Priority: KR10-2017-0001875 20170105
- Main IPC: H01L21/28
- IPC: H01L21/28 ; G06F13/42 ; G06F12/16 ; H01L29/51 ; G11C11/56 ; G06F12/02 ; G11C16/34 ; G11C16/10 ; G11C16/04

Abstract:
Provided herein may be a memory device and a method of operating the same. The memory device may include a memory block including a plurality of pages, and peripheral circuits configured to sequentially program the pages. The memory device may include control logic configured to control the peripheral circuits such that a program voltage is applied to a word line coupled to a page selected from among the pages such that different pass voltages are applied to all or some word lines coupled to pages on which a program operation has been performed among unselected pages other than the selected page, and to word lines coupled to pages on which a program operation has not been performed among the unselected pages.
Public/Granted literature
- US10937655B2 Memory device with various pass voltages Public/Granted day:2021-03-02
Information query
IPC分类: