- 专利标题: HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
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申请号: US17080694申请日: 2020-10-26
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公开(公告)号: US20210066475A1公开(公告)日: 2021-03-04
- 发明人: Andrew W. YEOH , Joseph STEIGERWALD , Jinhong SHIN , Vinay CHIKARMANE , Christopher P. AUTH
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L29/78 ; H01L27/088 ; H01L21/762 ; H01L29/06 ; H01L21/8234 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L29/165 ; H01L29/417 ; H01L21/033 ; H01L21/28 ; H01L21/285 ; H01L21/308 ; H01L21/311 ; H01L21/8238 ; H01L23/528 ; H01L27/092 ; H01L27/11 ; H01L49/02 ; H01L29/08 ; H01L29/51 ; H01L27/02 ; H01L21/02 ; H01L29/167
摘要:
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of conductive interconnect lines in and spaced apart by a first ILD layer, wherein individual ones of the first plurality of conductive interconnect lines comprise a first conductive barrier material along sidewalls and a bottom of a first conductive fill material. A second plurality of conductive interconnect lines is in and spaced apart by a second ILD layer above the first ILD layer, wherein individual ones of the second plurality of conductive interconnect lines comprise a second conductive barrier material along sidewalls and a bottom of a second conductive fill material, wherein the second conductive fill material is different in composition from the first conductive fill material.