- 专利标题： 3T2R BINARY WEIGHT CELL WITH HIGH ON/OFF FOR MEMORY DEVICE PROGRAMMED WITH TRANSVERSE CURRENTS
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申请号： US16850691申请日： 2020-04-16
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公开(公告)号： US20210118950A1公开(公告)日： 2021-04-22
- 发明人: Ryan Hatcher , Titash Rakshit , Jorge Kittl , Rwik Sengupta , Dharmendar Palle , Joon Goo Hong
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L27/24 ; G11C11/16 ; H01L43/02 ; G11C13/00 ; H01F10/32
摘要：
A weight cell, an electronic device and a device are provided. The weight cell includes a first resistive memory element and a second resistive memory element, a select transistor, and a layer of Spin Hall (SH) material disposed between the first resistive memory element and the second resistive memory element, the layer of the SH material including a first contact and a second contact. The first contact of the SH material is connected to a drain of the select transistor and the second contact of the SH material is connected to an external word line.
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