- 专利标题: SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
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申请号: US17217941申请日: 2021-03-30
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公开(公告)号: US20210311387A1公开(公告)日: 2021-10-07
- 发明人: Changsoo WOO , Eunmi KANG , Jaehyun KIM , Jimin KIM , Taeho KIM , Ran NAMGUNG , Kyungsoo MOON , Hwansung CHEON , Seungyong CHAE , Seung HAN
- 申请人: Samsung SDI Co., Ltd.
- 申请人地址: KR Yongin-si
- 专利权人: Samsung SDI Co., Ltd.
- 当前专利权人: Samsung SDI Co., Ltd.
- 当前专利权人地址: KR Yongin-si
- 优先权: KR10-2020-0040507 20200402
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; C07F7/22 ; H01L21/027
摘要:
A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(═O)R2.
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