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公开(公告)号：US20240319601A1
公开(公告)日：2024-09-26
申请号：US18578627
申请日：2022-07-04
发明人： Ryunmin HEO , Hyungrang MOON , Minyoung LEE , Minsoo KIM , Youngkwon KIM , Jaehyun KIM , Changsoo WOO
CPC分类号： G03F7/11 , G03F7/0042 , G03F7/168
摘要： Provided is a method of forming patterns that includes coating a metal-containing resist composition on a substrate; coating a composition for removing edge beads along the edge of the substrate; drying and heating the coated resultant to form a metal-containing resist film on the substrate; and exposing and developing the dried and heated resultant to form a resist pattern,
wherein the composition for removing edge beads may include at least one additive selected from a phosphorous acid-based compound, a hypophosphorous acid-based compound, a sulfurous acid-based compound and a hydroxamic acid-based compound, and an organic solvent.-
公开(公告)号：US20240288774A1
公开(公告)日：2024-08-29
申请号：US18570518
申请日：2022-06-27
发明人： Minyoung LEE , Hyungrang MOON , Ryunmin HEO , Minsoo KIM , Youngkwon KIM , Jaehyun KIM , Changsoo WOO
CPC分类号： G03F7/168 , G03F7/0042
摘要： Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including step of removing edge beads using the same and the composition includes an organic solvent and a cyclic compound substituted with at least one hydroxy group (—OH),
wherein the cyclic compound has a carbon number of 5 to 30, and
the cyclic compound has at least one double bond in the ring.-
公开(公告)号：US20210333708A1
公开(公告)日：2021-10-28
申请号：US17365926
申请日：2021-07-01
发明人： Kyung Soo MOON , Jaehyun KIM , Yoong Hee NA , Ran NAMGUNG , Hwansung CHEON , Seungyong CHAE
IPC分类号： G03F7/004 , H01L21/027 , G03F7/20 , H01L21/3213 , H01L21/311
摘要： This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition:
Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(═O)Rb.-
公开(公告)号：US20210325781A1
公开(公告)日：2021-10-21
申请号：US17361235
申请日：2021-06-28
发明人： Kyung Soo MOON , Jaehyun KIM , Yoong Hee NA , Ran NAMGUNG , Hwansung CHEON , Seungyong CHAE
IPC分类号： G03F7/004 , H01L21/02 , G03F7/09 , C07F7/22 , G03F7/075 , H01L21/467 , H01L21/475 , H01L21/47 , G03F1/22
摘要： This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition:
Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(═O)Rb.-
5.发明申请公开(公告)号：US20200348591A1
公开(公告)日：2020-11-05
申请号：US16859682
申请日：2020-04-27
发明人： Jaehyun KIM , Kyung Soo MOON , Seungyong CHAE , Ran NAMGUNG , Seung HAN
IPC分类号： G03F7/004 , C07F7/22 , H01L21/027 , H01L21/308
摘要： A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn—O—Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.
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公开(公告)号：US20230223262A1
公开(公告)日：2023-07-13
申请号：US18000917
申请日：2021-08-20
发明人： Kyungsoo MOON , Eunmi KANG , Jaehyun KIM , Jimin KIM , Taeho KIM , Changsoo WOO , Hwansung CHEON , Seungyong CHAE , Seung HAN
IPC分类号： H01L21/027 , H01L21/3213 , H01L21/311
CPC分类号： H01L21/0274 , H01L21/32135 , H01L21/32139 , H01L21/31116
摘要： Disclosed are a semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition. The semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same.
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公开(公告)号：US20230037563A1
公开(公告)日：2023-02-09
申请号：US17858924
申请日：2022-07-06
发明人： Ryunmin HEO , Hyungrang MOON , Minyoung LEE , Minsoo KIM , Youngkwon KIM , Jaehyun KIM , Changsoo WOO , Jung Min CHOI , Moohyun KOH , Jungah KIM , Sungan DO , Sang Won BAE , Hoon HAN , SukKoo HONG
IPC分类号： G03F7/32
摘要： A metal-containing photoresist developer composition, and a method of forming patterns including a step of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxy group (—OH). The heptagonal ring compound has at least two double bonds in the ring.
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8.发明申请公开(公告)号：US20220197138A1
公开(公告)日：2022-06-23
申请号：US17454453
申请日：2021-11-10
发明人： Kyungsoo MOON , Eunmi KANG , Jaehyun KIM , Jimin KIM , Changsoo WOO , Hwansung CHEON , Seungyong CHAE , Seung HAN
摘要： A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.
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9.发明申请公开(公告)号：US20200041901A1
公开(公告)日：2020-02-06
申请号：US16211068
申请日：2018-12-05
发明人： Ran NAMGUNG , Jaehyun KIM , Yoong Hee NA , Kyung Soo MOON , Hwansung CHEON , Seungyong CHAE
IPC分类号： G03F7/038 , H01L21/308 , G03F7/20 , G03F7/16 , G03F7/004
摘要： This disclosure relates to a semiconductor resist composition including an organometallic compound including a structural unit represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein in Chemical Formula 1, carbon bonded with a central metal atom (M) forms a benzylic bond with a ring group having a conjugated structure, such as an aromatic ring group, a heteroaromatic ring group, or a combination thereof.
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公开(公告)号：US20240329536A1
公开(公告)日：2024-10-03
申请号：US18580110
申请日：2022-07-04
发明人： Hyungrang MOON , Minyoung LEE , Ryunmin HEO , Jamin KU , Donghyung LEE , Dasom HAN , Minsoo KIM , Jaehyun KIM
CPC分类号： G03F7/11 , G03F7/0042 , G03F7/161 , G03F7/168
摘要： Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including a step of removing edge beads using the same and the composition includes an organic solvent and a compound having an A log P3 of greater than or equal to 30 Å2.
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