公开(公告)号：US20240168375A1

公开(公告)日：2024-05-23

申请号：US18484313

申请日：2023-10-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Minyoung LEE ,  Seung HAN ,  Sangkyun IM ,  Jimin KIM ,  Yaeun SEO ,  Gyeong Ryeong BAK

IPC: G03F7/004 ,  C07F7/22

CPC classification number: G03F7/0044 ,  C07F7/2224

Abstract: A semiconductor photoresist composition including an organometallic compound, an additive represented by Chemical Formula 1, and a solvent, and a method of forming uses the semiconductor photoresist composition. Details of Chemical Formula 1 are as defined in the specification.

公开(公告)号：US20210109442A1

公开(公告)日：2021-04-15

申请号：US17036693

申请日：2020-09-29

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyungsoo MOON ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Ran NAMGUNG ,  Changsoo WOO ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.

公开(公告)号：US20210311387A1

公开(公告)日：2021-10-07

申请号：US17217941

申请日：2021-03-30

Applicant: Samsung SDI Co., Ltd.

Inventor： Changsoo WOO ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Taeho KIM ,  Ran NAMGUNG ,  Kyungsoo MOON ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(═O)R2.

公开(公告)号：US20250044685A1

公开(公告)日：2025-02-06

申请号：US18755491

申请日：2024-06-26

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Changsoo WOO ,  Seol Hee LIM ,  Minyoung LEE ,  Jimin KIM

IPC: G03F7/004 ,  G03F1/80 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent. A method of forming (or providing) patterns utilizing the same is provided. (R1)n1-M-[(X)—R2]m1  [Chemical Formula 1]

公开(公告)号：US20240176234A1

公开(公告)日：2024-05-30

申请号：US18484247

申请日：2023-10-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Sangkyun IM ,  Seungyong CHAE ,  Yaeun SEO ,  Taegeun SEONG ,  Minyoung LEE ,  Jimin KIM

IPC: G03F7/004 ,  C07F7/22

CPC classification number: G03F7/0042 ,  C07F7/2224

Abstract: A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1 and a solvent. A method for forming patterns uses the semiconductor photoresist composition.

公开(公告)号：US20240061336A1

公开(公告)日：2024-02-22

申请号：US18323358

申请日：2023-05-24

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Changsoo WOO ,  Seung HAN ,  Seungyong CHAE ,  Minyoung LEE ,  Jimin KIM ,  Sumin JANG ,  Sangkyun IM ,  Yaeun SEO ,  Eunmi KANG ,  Soobin LIM ,  Kyungsoo MOON

IPC: G03F7/039 ,  G03F7/004

CPC classification number: G03F7/039 ,  G03F7/0045 ,  G03F7/0044

Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent, where the first organometallic compound is different from the second organometallic compound, at least one selected from among R1 and L1 may include a tertiary carbon, and at least one selected from among R2 and L2 may include at least one selected from among a primary carbon and a secondary carbon.

公开(公告)号：US20230223262A1

公开(公告)日：2023-07-13

申请号：US18000917

申请日：2021-08-20

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Kyungsoo MOON ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Taeho KIM ,  Changsoo WOO ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: H01L21/027 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/0274 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/31116

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition. The semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same.

公开(公告)号：US20220197138A1

公开(公告)日：2022-06-23

申请号：US17454453

申请日：2021-11-10

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyungsoo MOON ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Changsoo WOO ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22

Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the same are provided. The semiconductor photoresist composition includes a condensed product produced by a condensation reaction between an organotin compound represented by Chemical Formula 1 and at least one organic acid compound selected from a substituted organic acid, an organic acid including at least two acid functional groups, and a substituted or unsubstituted sulfonic acid; and a solvent. Specific details of Chemical Formula 1 are as defined in the specification.

公开(公告)号：US20250155799A1

公开(公告)日：2025-05-15

申请号：US18917822

申请日：2024-10-16

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Soobin LIM ,  Yaeun SEO ,  Sumin JANG ,  Changsoo WOO ,  Minyoung LEE ,  Taegeun SEONG ,  Eunmi KANG ,  Jimin KIM ,  Seungwoo JANG ,  Seung-Wook SHIN

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027

Abstract: A semiconductor photoresist composition including an organometallic compound; and a mixed solvent including an alcohol-based compound and a non-alcohol-based compound in a weight ratio of about 1:99 to about 30:70.

公开(公告)号：US20250102907A1

公开(公告)日：2025-03-27

申请号：US18676313

申请日：2024-05-28

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Minyoung LEE ,  Jimin KIM ,  Wanhee LIM ,  Jun SAKONG ,  Minki CHON ,  Changsoo WOO ,  Seung-Wook SHIN

IPC: G03F7/004 ,  H01L21/027

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound; a vinyl group-containing acid compound; and a solvent, and a method of forming a pattern using the same.