公开(公告)号：US20210311387A1

公开(公告)日：2021-10-07

申请号：US17217941

申请日：2021-03-30

Applicant: Samsung SDI Co., Ltd.

Inventor： Changsoo WOO ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Taeho KIM ,  Ran NAMGUNG ,  Kyungsoo MOON ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(═O)R2.

公开(公告)号：US20240319601A1

公开(公告)日：2024-09-26

申请号：US18578627

申请日：2022-07-04

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Ryunmin HEO ,  Hyungrang MOON ,  Minyoung LEE ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/16

CPC classification number: G03F7/11 ,  G03F7/0042 ,  G03F7/168

Abstract: Provided is a method of forming patterns that includes coating a metal-containing resist composition on a substrate; coating a composition for removing edge beads along the edge of the substrate; drying and heating the coated resultant to form a metal-containing resist film on the substrate; and exposing and developing the dried and heated resultant to form a resist pattern,



wherein the composition for removing edge beads may include at least one additive selected from a phosphorous acid-based compound, a hypophosphorous acid-based compound, a sulfurous acid-based compound and a hydroxamic acid-based compound, and an organic solvent.

公开(公告)号：US20240288774A1

公开(公告)日：2024-08-29

申请号：US18570518

申请日：2022-06-27

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Minyoung LEE ,  Hyungrang MOON ,  Ryunmin HEO ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO

IPC: G03F7/16 ,  G03F7/004

CPC classification number: G03F7/168 ,  G03F7/0042

Abstract: Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including step of removing edge beads using the same and the composition includes an organic solvent and a cyclic compound substituted with at least one hydroxy group (—OH),



wherein the cyclic compound has a carbon number of 5 to 30, and
the cyclic compound has at least one double bond in the ring.

公开(公告)号：US20230384667A1

公开(公告)日：2023-11-30

申请号：US18155545

申请日：2023-01-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Seol Hee LIM ,  Jaebum LIM ,  Yaeun SEO ,  Sumin JANG ,  Soobin LIM ,  Minyoung LEE ,  Jimin KIM ,  Jaeyeol BAEK ,  Eunmi KANG ,  Changsoo WOO

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: G03F7/0042 ,  C07F7/2224 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: A semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same are disclosed.

公开(公告)号：US20230038110A1

公开(公告)日：2023-02-09

申请号：US17858921

申请日：2022-07-06

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minyoung LEE ,  Hyungrang MOON ,  Ryunmin HEO ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO ,  Jung Min CHOI ,  Moohyun KOH ,  Jungah KIM ,  Sungan DO ,  Sang Won BAE ,  Hoon HAN ,  SukKoo HONG

IPC: G03F7/16 ,  G03F7/11

Abstract: A composition for removing edge beads from a metal-containing resist, and a method of forming patterns including step of removing edge beads using the same are provided. The composition for removing edge beads from a metal-containing resist includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxyl group (—OH). The heptagonal ring compound has at least two double bonds in the ring.

公开(公告)号：US20210356861A1

公开(公告)日：2021-11-18

申请号：US17306820

申请日：2021-05-03

Applicant: Samsung SDI Co., Ltd.

Inventor： Seung HAN ,  Jaehyun KIM ,  Kyungsoo MOON ,  Changsoo WOO ,  Seungyong CHAE ,  Ran NAMGUNG ,  Hwansung CHEON

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition.

公开(公告)号：US20210109442A1

公开(公告)日：2021-04-15

申请号：US17036693

申请日：2020-09-29

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyungsoo MOON ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Ran NAMGUNG ,  Changsoo WOO ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.

公开(公告)号：US20250155799A1

公开(公告)日：2025-05-15

申请号：US18917822

申请日：2024-10-16

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Soobin LIM ,  Yaeun SEO ,  Sumin JANG ,  Changsoo WOO ,  Minyoung LEE ,  Taegeun SEONG ,  Eunmi KANG ,  Jimin KIM ,  Seungwoo JANG ,  Seung-Wook SHIN

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027

Abstract: A semiconductor photoresist composition including an organometallic compound; and a mixed solvent including an alcohol-based compound and a non-alcohol-based compound in a weight ratio of about 1:99 to about 30:70.

公开(公告)号：US20250102907A1

公开(公告)日：2025-03-27

申请号：US18676313

申请日：2024-05-28

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Minyoung LEE ,  Jimin KIM ,  Wanhee LIM ,  Jun SAKONG ,  Minki CHON ,  Changsoo WOO ,  Seung-Wook SHIN

IPC: G03F7/004 ,  H01L21/027

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound; a vinyl group-containing acid compound; and a solvent, and a method of forming a pattern using the same.

公开(公告)号：US20250044686A1

公开(公告)日：2025-02-06

申请号：US18764931

申请日：2024-07-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yaeun SEO ,  Jimin KIM ,  Minyoung LEE ,  Eunmi KANG ,  Taegeun SEONG ,  Changsoo WOO ,  Sumin JANG ,  Bukeun OH ,  Chungheon LEE

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/039

Abstract: Disclosed is a method of forming patterns including coating a metal-containing resist composition on a substrate; a heat treatment including drying and heating to form a metal-containing resist layer on the substrate; exposing a metal-containing resist layer using a patterned mask; and developing including coating a developer composition to remove unexposed regions to form a resist pattern, wherein the coating the metal-containing resist composition is performed by coating the metal-containing resist composition with a spin coater at a speed of about 100 to about 1,500 rpm for about 60 to about 120 seconds, the heating is performed at a temperature of about 90 to about 200° C. for about 30 to about 120 seconds, the exposing the metal-containing resist layer is performed by irradiating extreme ultraviolet light, light having a wavelength of about 5 nm to about 50 nm, or a combination thereof.