公开(公告)号：US20250123568A1

公开(公告)日：2025-04-17

申请号：US18828854

申请日：2024-09-09

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Seung HAN ,  Hyungrang MOON ,  Taeho KIM ,  Jongpil HO ,  Jin-Hee BAE ,  Miyeon HAN

IPC: G03F7/16 ,  C07C49/12 ,  C07C49/76 ,  G03F7/004

Abstract: Provided are a composition selected from a composition for removing edge beads from metal-containing resists and a developer composition of metal-containing resists, and a method of forming patterns using the same, the composition includes a compound including at least two ketone groups; and an organic solvent including at least one selected from an acetate-based solvent and an alcohol-based solvent, wherein the compound including at least two ketone groups is included in an amount of about 10 to about 70 wt % based on the total weight of the composition, and the organic solvent is included in an amount of about 30 to about 90 wt % based on a total weight of the composition.

公开(公告)号：US20240385522A1

公开(公告)日：2024-11-21

申请号：US18610099

申请日：2024-03-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Taeksoo KWAK ,  Si-Kyun PARK ,  Hyungrang MOON ,  Jongpil HO ,  Gyeonghun PARK ,  Myoungsoo SONG ,  Jin-Hee BAE ,  Minsoo KIM ,  Seung HAN ,  Taeho KIM ,  Gyeong Ryeong BAK

IPC: G03F7/11 ,  C07F7/22 ,  G03F7/004 ,  H01L21/027

Abstract: A composition for removing edge beads from metal-containing resists, and a method of forming patterns including a step of removing edge beads using the composition are provided. The composition for removing edge beads includes an additive including at least one selected from among phosphoric acid, a phosphorous acid-based compound, and a hypophosphorous acid-based compound, and a carboxylic acid-based compound, and an organic solvent, where a mixed weight ratio of the at least one selected from among the phosphoric acid, the phosphorous acid-based compound, and the hypophosphorous acid-based compound to the carboxylic acid-based compound is about 9:1 to about 1.2:1.

公开(公告)号：US20230223262A1

公开(公告)日：2023-07-13

申请号：US18000917

申请日：2021-08-20

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Kyungsoo MOON ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Taeho KIM ,  Changsoo WOO ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: H01L21/027 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/0274 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/31116

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition. The semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent and a method of forming patterns using the same.

公开(公告)号：US20240393684A1

公开(公告)日：2024-11-28

申请号：US18617447

申请日：2024-03-26

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Jongpil HO ,  Hyungrang MOON ,  Seung HAN ,  Taeho KIM ,  Gyeong Ryeong BAK ,  Si-Kyun PARK ,  Taeksoo KWAK ,  Gyeonghun PARK ,  Myoungsoo SONG ,  Jin-Hee BAE ,  Minsoo KIM

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/32

Abstract: Provided is a method of forming patterns which includes coating a metal-containing resist composition on a substrate; drying and heating to form a metal-containing resist film on the substrate; exposing the metal-containing resist film using a patterned mask; and coating a developer composition to remove unexposed regions to form a resist pattern A thickness of the resist film after development is increased by about 5 to about 100% compared to the thickness of the resist film before development, and
a surface of the resist film after the development may include about 5 to about 20 at % of at least one selected from a phosphorus element and a sulfur element, based on the total number of atoms.

公开(公告)号：US20210311387A1

公开(公告)日：2021-10-07

申请号：US17217941

申请日：2021-03-30

Applicant: Samsung SDI Co., Ltd.

Inventor： Changsoo WOO ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Taeho KIM ,  Ran NAMGUNG ,  Kyungsoo MOON ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(═O)R2.

公开(公告)号：US20190317403A1

公开(公告)日：2019-10-17

申请号：US16340728

申请日：2017-06-14

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Shinhyo BAE ,  Taeho KIM ,  Yushin PARK ,  Youjung PARK ,  Hyunji SONG ,  Hyunsoo LEE ,  Hyejin JANG

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20

Abstract: An organic layer composition includes an aromatic ring compound, an additive including perfluoroalkyl in the structure, and a solvent, wherein a fluoro (F) group included in the additive is included in an amount of greater than 0 wt % and less than or equal to 30 wt % based on a total weight, 100 wt % of the additive, and a surface tension decrease rate of the additive measured according to Condition 1 is 0.1% to 30%. The definition of Condition 1 is the same as described in the specification.

公开(公告)号：US20250044696A1

公开(公告)日：2025-02-06

申请号：US18784565

申请日：2024-07-25

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Taeho KIM ,  Minsoo KIM ,  Hyungrang MOON ,  Si-Kyun PARK ,  Jin-Hee BAE ,  Seung HAN ,  Jongpil HO ,  Gyeong Ryeong BAK ,  Myoungsoo SONG ,  Gyeonghun PARK

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/16

Abstract: A composition for removing edge beads from metal-containing resists, a developer composition of metal-containing resists, and methods of forming patterns using the same are disclosed. The composition according to one or more embodiments includes a C1 to C10 carboxylic acid compound substituted with at least one fluorine; and an organic solvent.

公开(公告)号：US20240393694A1

公开(公告)日：2024-11-28

申请号：US18658892

申请日：2024-05-08

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyungrang MOON ,  Jongpil HO ,  Taeho KIM ,  Seung HAN ,  Gyeonghun PARK ,  Myoungsoo SONG ,  Taeksoo KWAK ,  Si-Kyun PARK ,  Jin-Hee BAE ,  Minsoo KIM

IPC: G03F7/16

Abstract: A metal-containing photoresist developer composition includes an organic solvent, and a sulfonimide-based compound. A method of forming patterns utilizing the developer composition includes: coating a metal-containing resist composition on a substrate; coating a composition for removing edge beads from a metal-containing resist along an edge of the substrate; drying and heating the resultant to form a metal-containing resist layer on the substrate; exposing the metal-containing resist layer; and coating the metal-containing photoresist developer composition and developing the metal-containing photoresist developer composition.

公开(公告)号：US20230115975A1

公开(公告)日：2023-04-13

申请号：US17963558

申请日：2022-10-11

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Taeho KIM

IPC: H01M10/42 ,  H01M10/48 ,  G01R31/396 ,  H02J7/00

Abstract: An embodiment provides a battery apparatus including: a battery module including a plurality of battery cells; and a battery management system that receives operation information including mode information and task information about an operation being performed by the battery module from the battery module and that generates a control signal with respect to the battery module based on the operation information to transmit it to a battery module connected thereto. Wherein one mode includes a plurality of tasks of which order is predetermined.