公开(公告)号：US20210311387A1

公开(公告)日：2021-10-07

申请号：US17217941

申请日：2021-03-30

Applicant: Samsung SDI Co., Ltd.

Inventor： Changsoo WOO ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Taeho KIM ,  Ran NAMGUNG ,  Kyungsoo MOON ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(═O)R2.

公开(公告)号：US20200041896A1

公开(公告)日：2020-02-06

申请号：US16211114

申请日：2018-12-05

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyung Soo MOON ,  Jaehyun KIM ,  Yoong Hee NA ,  Ran NAMGUNG ,  Hwansung CHEON ,  Seungyong CHAE

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/20

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein L includes at least one alkylene group in the main chain. A pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.

公开(公告)号：US20210333708A1

公开(公告)日：2021-10-28

申请号：US17365926

申请日：2021-07-01

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Kyung Soo MOON ,  Jaehyun KIM ,  Yoong Hee NA ,  Ran NAMGUNG ,  Hwansung CHEON ,  Seungyong CHAE

IPC: G03F7/004 ,  H01L21/027 ,  G03F7/20 ,  H01L21/3213 ,  H01L21/311

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition:
Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(═O)Rb.

公开(公告)号：US20210325781A1

公开(公告)日：2021-10-21

申请号：US17361235

申请日：2021-06-28

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Kyung Soo MOON ,  Jaehyun KIM ,  Yoong Hee NA ,  Ran NAMGUNG ,  Hwansung CHEON ,  Seungyong CHAE

IPC: G03F7/004 ,  H01L21/02 ,  G03F7/09 ,  C07F7/22 ,  G03F7/075 ,  H01L21/467 ,  H01L21/475 ,  H01L21/47 ,  G03F1/22

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition:
Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(═O)Rb.

公开(公告)号：US20200348591A1

公开(公告)日：2020-11-05

申请号：US16859682

申请日：2020-04-27

Applicant: Samsung SDI Co., Ltd.

Inventor： Jaehyun KIM ,  Kyung Soo MOON ,  Seungyong CHAE ,  Ran NAMGUNG ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027 ,  H01L21/308

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn—O—Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.

公开(公告)号：US20210356861A1

公开(公告)日：2021-11-18

申请号：US17306820

申请日：2021-05-03

Applicant: Samsung SDI Co., Ltd.

Inventor： Seung HAN ,  Jaehyun KIM ,  Kyungsoo MOON ,  Changsoo WOO ,  Seungyong CHAE ,  Ran NAMGUNG ,  Hwansung CHEON

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition.

公开(公告)号：US20210109442A1

公开(公告)日：2021-04-15

申请号：US17036693

申请日：2020-09-29

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyungsoo MOON ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Ran NAMGUNG ,  Changsoo WOO ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.

公开(公告)号：US20200041897A1

公开(公告)日：2020-02-06

申请号：US16211145

申请日：2018-12-05

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyung Soo MOON ,  Jaehyun KIM ,  Yoong Hee NA ,  Ran NAMGUNG ,  Hwansung CHEON ,  Seungyong CHAE

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/20

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(═O)Rb.

公开(公告)号：US20240176234A1

公开(公告)日：2024-05-30

申请号：US18484247

申请日：2023-10-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Sangkyun IM ,  Seungyong CHAE ,  Yaeun SEO ,  Taegeun SEONG ,  Minyoung LEE ,  Jimin KIM

IPC: G03F7/004 ,  C07F7/22

CPC classification number: G03F7/0042 ,  C07F7/2224

Abstract: A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1 and a solvent. A method for forming patterns uses the semiconductor photoresist composition.

公开(公告)号：US20240061336A1

公开(公告)日：2024-02-22

申请号：US18323358

申请日：2023-05-24

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Changsoo WOO ,  Seung HAN ,  Seungyong CHAE ,  Minyoung LEE ,  Jimin KIM ,  Sumin JANG ,  Sangkyun IM ,  Yaeun SEO ,  Eunmi KANG ,  Soobin LIM ,  Kyungsoo MOON

IPC: G03F7/039 ,  G03F7/004

CPC classification number: G03F7/039 ,  G03F7/0045 ,  G03F7/0044

Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent, where the first organometallic compound is different from the second organometallic compound, at least one selected from among R1 and L1 may include a tertiary carbon, and at least one selected from among R2 and L2 may include at least one selected from among a primary carbon and a secondary carbon.