公开(公告)号：US20240393692A1

公开(公告)日：2024-11-28

申请号：US18624406

申请日：2024-04-02

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyeon PARK ,  Ran NAMGUNG ,  Kyoungjin HA ,  Daeseok SONG ,  Minsoo KIM

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/14

Abstract: A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit including at least one of structural units represented by Chemical Formula M-3A, Chemical Formula M-3B, Chemical Formula M-3C, and Chemical Formula M-3D; and a solvent.

公开(公告)号：US20230026579A1

公开(公告)日：2023-01-26

申请号：US17733743

申请日：2022-04-29

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Shinhyo BAE ,  Hyeon PARK ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16 ,  H01L21/027 ,  H01L21/311

Abstract: A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

公开(公告)号：US20160297932A1

公开(公告)日：2016-10-13

申请号：US14954403

申请日：2015-11-30

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yu-Shin PARK ,  Yun-Jun KIM ,  Tae-Ho KIM ,  You-Jung PARK ,  Yoo-Jeong CHOI ,  Hyo-Young KWON ,  Seung-Hyun KIM ,  Ran NAMGUNG ,  Dominea RATHWELL ,  Soo-Hyoun MUN ,  Hyun-Ji SONG ,  Hyeon-Il JUNG ,  Yu-Mi HEO

IPC: C08G73/06 ,  G03F7/40 ,  G03F7/20 ,  G03F7/32 ,  G03F7/11 ,  G03F7/16

CPC classification number: C08G73/0672 ,  G03F7/0041 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L51/0018

Abstract: An organic layer composition, an organic layer, and associated methods, the composition including a polymer that includes a moiety represented by Chemical Formula 1, a monomer represented by Chemical Formula 2, and a solvent,

Abstract translation: 有机层组合物包括含有由化学式1表示的部分的聚合物，由化学式2表示的单体和溶剂以及由有机层组合物制成的有机层，以及使用有机层组合物形成图案的方法 也提供。 化学式1和2的定义与详细描述相同。 [化学式1] [化学式2]。

公开(公告)号：US20250076764A1

公开(公告)日：2025-03-06

申请号：US18794878

申请日：2024-08-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyeon PARK ,  Ran NAMGUNG ,  Kyoungjin HA ,  Daeseok SONG ,  Minsoo KIM

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16

Abstract: Provided are a resist topcoat composition and a method of forming patterns using the resist topcoat composition, the resist topcoat composition including a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit represented by Chemical Formula M-3A or Chemical Formula M-3B; and a solvent.

公开(公告)号：US20240427248A1

公开(公告)日：2024-12-26

申请号：US18734967

申请日：2024-06-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Kyoungjin HA ,  Ran NAMGUNG ,  Hyeon PARK ,  Daeseok SONG ,  Minsoo KIM

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16

Abstract: A resist topcoat composition and a method of forming (or providing) patterns utilizing the resist topcoat composition are provided. The resist topcoat composition includes a copolymer including a first structural unit represented by Chemical Formula M-1, a second structural unit represented by Chemical Formula M-2, and a third structural unit represented by Chemical Formula M-3A or Chemical Formula M-3B; and a solvent. Details about the above chemical formulas are as described in the specification.

公开(公告)号：US20210311387A1

公开(公告)日：2021-10-07

申请号：US17217941

申请日：2021-03-30

Applicant: Samsung SDI Co., Ltd.

Inventor： Changsoo WOO ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Taeho KIM ,  Ran NAMGUNG ,  Kyungsoo MOON ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(═O)R2.

公开(公告)号：US20200041896A1

公开(公告)日：2020-02-06

申请号：US16211114

申请日：2018-12-05

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyung Soo MOON ,  Jaehyun KIM ,  Yoong Hee NA ,  Ran NAMGUNG ,  Hwansung CHEON ,  Seungyong CHAE

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/20

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein L includes at least one alkylene group in the main chain. A pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.

公开(公告)号：US20160322216A1

公开(公告)日：2016-11-03

申请号：US15062233

申请日：2016-03-07

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Soohyoun MUN ,  Hyo Young KWON ,  Ran NAMGUNG ,  Younhee NAM ,  Hyunji SONG

IPC: H01L21/027 ,  H01L21/311 ,  C09D161/06 ,  C08G8/04

CPC classification number: C09D161/06 ,  C08G8/04 ,  C08G12/26 ,  C08G73/0672 ,  C09D161/26 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332

Abstract: A polymer includes a first moiety represented by Chemical Formula 1, and a second moiety including a substituted or unsubstituted C6 to C60 cyclic group, a substituted or unsubstituted C6 to C60 hetero cyclic group, or a combination thereof: In Chemical Formula 1, X is phosphorus (P), nitrogen (N), boron (B), or P═O, Y1 and Y2 are independently hydrogen or a moiety including at least one substituted or unsubstituted benzene ring, provided that at least one of Y1 and Y2 is the moiety including at least one substituted or unsubstituted benzene ring, Y3 is another moiety including at least one substituted or unsubstituted benzene ring, and * is a linking point.

Abstract translation: 在化学式1中，X是磷（P），氮（N），硼（B）或P = O，Y 1和Y 2独立地是氢或包含至少一个取代或未取代的苯环的部分，条件是至少 Y1和Y2之一是包含至少一个取代或未取代的苯环的部分，Y 3是包括至少一个取代或未取代的苯环的另一部分，和*是连接点。

公开(公告)号：US20160152771A1

公开(公告)日：2016-06-02

申请号：US14936023

申请日：2015-11-09

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Soo-Hyoun MUN ,  Hyo-Young KWON ,  Seung-Hyun KIM ,  Ran NAMGUNG ,  Dominea RATHWELL ,  Hyeon-Il JUNG ,  Yu-Mi HEO

IPC: C08G73/06 ,  H01L21/311 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/027 ,  G03F7/004 ,  H01L21/308

CPC classification number: C08G73/0672 ,  C08G61/124 ,  C08G2261/1422 ,  C08G2261/1424 ,  C08G2261/1428 ,  C08G2261/148 ,  C08G2261/3241 ,  C08G2261/3424 ,  G03F7/004 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: A polymer, an organic layer composition including the polymer, an organic layer formed from the organic layer composition, and a method of forming patterns using the organic layer composition, the polymer including a moiety represented by Chemical Formula 1: *-A1-A3A2-A4n*.  [Chemical Formula 1]

Abstract translation: 聚合物，包含聚合物的有机层组合物，由有机层组合物形成的有机层以及使用有机层组合物形成图案的方法，所述聚合物包含由化学式1表示的部分：* -A1-A3 A2-A4号*。 [化学式1]

公开(公告)号：US20230103089A1

公开(公告)日：2023-03-30

申请号：US17868563

申请日：2022-07-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yoojeong CHOI ,  Soonhyung KWON ,  Minsoo KIM ,  Seongjin KIM ,  Jaeyeol BAEK ,  Hwayoung JIN ,  Ran NAMGUNG ,  Hyeon PARK ,  Daeseok SONG

IPC: G03F7/11 ,  C07D251/32 ,  C07D405/06 ,  C07D209/86 ,  C07D209/62 ,  C07D333/54 ,  C07D339/08 ,  C07C39/23 ,  C08K5/378 ,  C08K5/3417 ,  C08K5/45

Abstract: A resist underlayer composition including a polymer including a main chain, a side chain, or a main chain and a side chain including a heterocycle including two or more nitrogen atoms in the ring of the heterocycle, a compound including a moiety represented by Chemical Formula 1, and a solvent is provided. A method of forming patterns using the resist underlayer composition is also provided