Invention Application
- Patent Title: FERROELECTRIC FIELD EFFECT TRANSISTORS HAVING ENHANCED MEMORY WINDOW AND METHODS OF MAKING THE SAME
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Application No.: US17097757Application Date: 2020-11-13
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Publication No.: US20220157852A1Publication Date: 2022-05-19
- Inventor: Bhagwati PRASAD , Joyeeta NAG , Seung-Yeul YANG , Adarsh RAJASHEKHAR , Raghuveer S. MAKALA
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Main IPC: H01L27/11597
- IPC: H01L27/11597 ; H01L27/11587 ; H01L27/1159 ; H01L29/51 ; H01L29/66
Abstract:
A ferroelectric transistor includes a semiconductor channel comprising a semiconductor material, a strained and/or defect containing ferroelectric gate dielectric layer located on a surface of the semiconductor channel, a source region located on a first end portion of the semiconductor channel, and a drain region located on a second end portion of the semiconductor channel.
Public/Granted literature
- US11545506B2 Ferroelectric field effect transistors having enhanced memory window and methods of making the same Public/Granted day:2023-01-03
Information query
IPC分类:
