Invention Publication
- Patent Title: INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE
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Application No.: US17850778Application Date: 2022-06-27
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Publication No.: US20230420512A1Publication Date: 2023-12-28
- Inventor: Sukru YEMENICIOGLU , Xinning WANG , Nischal ARKALI RADHAKRISHNA , Leonard P. GULER , Mauro J. KOBRINSKY , June CHOI , Pratik PATEL , Tahir GHANI
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/088 ; H01L29/423 ; H01L29/786 ; H01L23/48 ; H01L29/775

Abstract:
Integrated circuit structures having backside power staple are described. In an example, an integrated circuit structure includes a plurality of gate lines. A plurality of trench contacts is extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A front-side metal routing layer is extending over one or more of the plurality of gate lines, and over and coupled to one or more of the plurality of trench contacts. A backside metal routing layer is extending beneath the one or more of the plurality of gate lines and the one or more of the plurality of trench contacts, the backside metal routing layer parallel and overlapping with the front-side metal routing layer. A conductive feedthrough structure couples the backside metal routing layer to the front-side metal routing layer.
Information query
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