Invention Grant
US4753900A Method of forming electrodes aligned with respect to a level of
implantation in a substrate and a method of forming a charge transfer
filter
失效
形成相对于衬底中的注入水平排列的电极的方法和形成电荷转移滤光器的方法
- Patent Title: Method of forming electrodes aligned with respect to a level of implantation in a substrate and a method of forming a charge transfer filter
- Patent Title (中): 形成相对于衬底中的注入水平排列的电极的方法和形成电荷转移滤光器的方法
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Application No.: US942672Application Date: 1986-12-17
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Publication No.: US4753900APublication Date: 1988-06-28
- Inventor: Pierre Blanchard , Gerard Beal
- Applicant: Pierre Blanchard , Gerard Beal
- Applicant Address: FRX Paris
- Assignee: Thomson-CSF
- Current Assignee: Thomson-CSF
- Current Assignee Address: FRX Paris
- Priority: FRX8518987 19851220
- Main IPC: H01L21/339
- IPC: H01L21/339 ; H01L29/76 ; H01L29/762 ; H01L29/772 ; H03H15/02 ; H01L21/28
Abstract:
The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases:formation of a dielectric layer on a substrate;formation of semiconducting or conducting elements which are to serve as mask for implantation;implantation;formation of a layer of conducting or semiconducting material;cutting out electrodes from said layer and from the semiconducting or conducting elements.
Public/Granted literature
- US4220139A Solar panel shielding Public/Granted day:1980-09-02
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