公开(公告)号：US4753900A

公开(公告)日：1988-06-28

申请号：US942672

申请日：1986-12-17

Applicant: Pierre Blanchard ,  Gerard Beal

Inventor： Pierre Blanchard ,  Gerard Beal

IPC: H01L21/339 ,  H01L29/76 ,  H01L29/762 ,  H01L29/772 ,  H03H15/02 ,  H01L21/28

CPC classification number: H01L29/66954

Abstract: The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases:formation of a dielectric layer on a substrate;formation of semiconducting or conducting elements which are to serve as mask for implantation;implantation;formation of a layer of conducting or semiconducting material;cutting out electrodes from said layer and from the semiconducting or conducting elements.

Abstract translation: 本发明提供了一种形成相对于衬底中的注入水平排列的电极的方法，包括以下主要阶段：在衬底上形成电介质层; 形成用作植入掩模的半导体或导电元件; 植入; 形成一层导电或半导体材料; 从所述层和半导体或导电元件切割电极。

公开(公告)号：US4562417A

公开(公告)日：1985-12-31

申请号：US485214

申请日：1983-04-15

Applicant: Gerard Beal ,  Jean-Louis Coutures

Inventor： Gerard Beal ,  Jean-Louis Coutures

IPC: G11C27/04 ,  H03H15/02 ,  H03H9/70 ,  H01L29/78

CPC classification number: G11C27/04 ,  H03H15/02

Abstract: In this transverse charge transfer filter having N MOS capacitors arranged on the same semiconductor substrate and provided with electrodes, the electrode of every other MOS capacitor has its ends covered by the ends of the electrodes of two adjacent MOS capacitors, the N MOS capacitors being arranged in n rows and the charge transfer direction in two adjacent rows being opposite, which makes it possible to compensate for the effects of the displacements of the masks used for manufacturing the transverse charge transfer filters.

Abstract translation: 在具有布置在同一半导体衬底上并具有电极的N个MOS电容器的横向电荷转移滤波器中，每隔一个MOS电容器的电极的端部由两个相邻的MOS电容器的电极的端部覆盖，N个MOS电容器被布置 在n行中并且两个相邻行中的电荷转移方向相反，这使得可以补偿用于制造横向电荷转移滤波器的掩模的位移的影响。

公开(公告)号：US20060237625A1

公开(公告)日：2006-10-26

申请号：US10562686

申请日：2004-06-25

Applicant: Jean-Marie Caupain ,  Gerard Beal ,  Thierry Ligozat

Inventor： Jean-Marie Caupain ,  Gerard Beal ,  Thierry Ligozat

IPC: H01L27/00

CPC classification number: H01L31/0352 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14806

Abstract: The invention relates to small dimension image recorders, such as an image recorder, comprising a matrix of rows and columns of photosensitive points, arranged on a chip of a generally square or rectangular form with believed corners, characterised in comprising a reading register arranged at the base of the matrix. The register is bent to follow the bevelled corners of the chip and thus comprises a horizontal piece and two oblique pieces. The sensor further comprises means (ZIn) to direct the photosensitive charges form the columns terminating opposite the beveled corners towards the stage of the reister situated in the oblique part along the beveled corners. The above is of application to intraoral dental radiological sensors.

Abstract translation: 本发明涉及小尺寸图像记录器，诸如图像记录器，其包括布置在大致正方形或矩形形状的芯片上的感知点的行和列的矩阵，其特征在于包括布置在该位置处的读取寄存器 矩阵的基数。 该寄存器被弯曲以跟随芯片的斜角，因此包括水平件和两个倾斜件。 该传感器还包括用于将光敏电荷从沿着倾斜角转向的倾斜部分的反射器的台面引导到与倾斜角相反的列的装置（ZI N n N）。 以上适用于口腔内放射性传感器。