公开(公告)号：US20110047528A1

公开(公告)日：2011-02-24

申请号：US12446042

申请日：2007-10-16

Applicant: Paul Blanchard ,  Luc Chevalier ,  Pierre Blanchard

Inventor： Paul Blanchard ,  Luc Chevalier ,  Pierre Blanchard

IPC: G06F9/44

CPC classification number: G06F8/20 ,  G06Q10/06

Abstract: An online qualification management system that can be used to perform qualification management, such as candidate assessment for recruiting or promoting purposes, job description simulations, and learning management. A computing entity can execute a software application to implement a qualification management project that interacts online with a candidate to perform an assessment procedure on the candidate. The qualification management project includes a set of modules intended to interact individually with the candidate being assessed. One of the modules of the set may be a test module for testing the candidate for one or more skills. Another one of the modules of the set may be a virtual simulation module and implement a virtual simulation, the virtual simulation having a scenario defined by a chain of events and including a plurality of graphical scenes. The virtual simulation can also involve one or more avatars and/or interactive graphical objects. An author can use an authoring tool to create the qualification management project.

Abstract translation: 可用于执行资格管理的在线资格管理系统，如招聘或推广目的候选人评估，工作描述模拟和学习管理。 计算实体可以执行软件应用程序来实施与候选者在线交互以对候选者执行评估程序的资格管理项目。 资格管理项目包括一组旨在与被评估候选人单独交互的模块。 该组件的一个模块可以是用于测试候选人的一种或多种技能的测试模块。 该组的另一个模块可以是虚拟模拟模块并实现虚拟仿真，虚拟模拟具有由事件链定义并包括多个图形场景的场景。 虚拟模拟还可以涉及一个或多个化身和/或交互式图形对象。 作者可以使用创作工具创建资格管理项目。

公开(公告)号：US07300974B2

公开(公告)日：2007-11-27

申请号：US10781686

申请日：2004-02-20

Applicant: Pierre Blanchard ,  Detlef Gysau ,  Patrick Trouve ,  Marion Loman-Oonk, legal representative

Inventor： Henny Loman, deceased

IPC: C08G77/04 ,  C08J3/00 ,  C08K3/26 ,  C08L75/00 ,  C08L83/00

CPC classification number: C01F11/18 ,  C01P2006/12 ,  C01P2006/19 ,  C08K3/26 ,  C08K2003/265 ,  C09D5/34 ,  C09K3/10 ,  C09K2200/0239

Abstract: The invention relates to the selection of a natural calcium carbonate crushed to a high degree of fineness, possibly treated with one or more fatty acids or one or more of their salts or mixtures thereof, and its use as a rheology regulator for polymeric compositions.The specific surface area is 14 to 30 m2/g measured according to the BET method to ISO 4652, and the oil absorption is greater than 16 measured according to ISO 787-V (Rub-out method).The conditions of mixing of the constituents and manufacture are improved, as well as the properties of the final product.

Abstract translation: 本发明涉及粉碎成高度细度的天然碳酸钙的选择，其可能用一种或多种脂肪酸或其一种或多种盐或其混合物处理，以及其作为聚合物组合物的流变调节剂的用途。 比表面积根据BET法按照ISO 4652测量为14至30m 2 / g，吸油率大于根据ISO787-V（擦除法）测量的16， 。 改善了组分和制造的混合条件以及最终产品的性能。

公开(公告)号：US06951900B2

公开(公告)日：2005-10-04

申请号：US10203782

申请日：2001-02-14

Applicant: Pierre Blanchard ,  Maurice Husson

Inventor： Pierre Blanchard ,  Maurice Husson

IPC: B29B7/00 ,  B29K23/00 ,  B29K105/16 ,  C08J3/22 ,  C08J5/18 ,  C08K3/00 ,  C08L21/00 ,  C08L23/00 ,  C08K3/26

CPC classification number: C08J3/226 ,  C08J2423/00

Abstract: The invention relates to the use of isotactic polypropylenes of very great fluidity for the preparation of concentrates of fillers which can be used in thermoplastics of the olefinic type such as polypropylene, polyethylene and as a general rule: the polymers used alone or in a mixture, based on ethylenic monomers containing 2 to 6 atoms of carbon polymerized alone or in a mixture. The invention also relates to the concentrates of fillers or master batches prepared from isotactic polypropylenes of very great fluidity. The invention finally relates to the loaded thermoplastic materials obtained with the addition of selected polypropylenes according to the invention, and the industrial products manufactured from, or containing, such thermoplastic materials.

Abstract translation: 本发明涉及非常大流动性的全同立构聚丙烯用于制备可用于烯烃类热塑性塑料如聚丙烯，聚乙烯的填料浓缩物，并且一般规则是：单独使用或混合使用的聚合物， 基于单独或以混合物聚合的含有2-6个碳原子的烯烃单体。 本发明还涉及由具有非常大流动性的全同立构聚丙烯制备的填料或母料的浓缩物。 本发明最终涉及通过添加根据本发明的选择的聚丙烯获得的装载的热塑性材料，以及由这种热塑性材料制造或包含这些热塑性材料的工业产品。

公开(公告)号：US20050119419A1

公开(公告)日：2005-06-02

申请号：US10502794

申请日：2003-02-03

Applicant: Pierre Blanchard ,  Maurice Husson

Inventor： Pierre Blanchard ,  Maurice Husson

IPC: C08L101/00 ,  C08F220/06 ,  C08F220/12 ,  C08J3/22 ,  C08K3/00 ,  C09D7/02 ,  C09D17/00 ,  C08F20/54

CPC classification number: C08J3/226 ,  C08F220/06 ,  C08F220/12 ,  C08J2433/00 ,  C09D7/45 ,  C09D17/004

Abstract: The present invention concerns copolymers containing carboxyl groups simultaneously with a function of a binding agent and a function of a rheology modifier or viscosity reducer or grinding aid agent for aqueous suspensions of pigments and/or mineral fillers, used to obtain grains of pigments and/or mineral fillers, reconstituted and formed from elementary particles with a specific BET surface ranging from 0.5 m2/g to 200 m2/g, grains that can easily be re-dispersed in thermoplastic resins. The invention also concerns the agglomerate minerals obtained and their uses.

Abstract translation: 本发明涉及同时具有粘合剂功能的羧基的共聚物，以及用于获得颜料和/或颜料的颜料和/或矿物填料的水性悬浮液的流变改性剂或粘度降低剂或研磨助剂的功能， 矿物填料，由具有0.5m 2 / g至200m 2 / g的特定BET表面的元素颗粒重构和形成，可容易地重新分散的颗粒 在热塑性树脂中。 本发明还涉及获得的附聚矿物及其用途。

公开(公告)号：US06787575B1

公开(公告)日：2004-09-07

申请号：US09719574

申请日：2001-05-14

Applicant: Jean Pierre Fichou ,  Maurice Husson ,  Georges Ravet ,  Pierre Blanchard

Inventor： Jean Pierre Fichou ,  Maurice Husson ,  Georges Ravet ,  Pierre Blanchard

IPC: B01F1742

CPC classification number: C09C3/08 ,  C01P2004/50 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/10 ,  C01P2006/22 ,  C08G65/2639 ,  C08G65/3355 ,  C08G2101/0083 ,  C08K9/04 ,  C08L75/04

Abstract: The invention relates to the technological sector of mineral fillers used in the sector which manufactures polyurethane foams and in particular fillers of the carbonate, hydroxide, silicate, sulphate type and similar mineral fillers. The invention relates in particular to a method of treating mineral fillers of a specific grain size with the aid of treatment agents of the organic phosphate type, incorporating a de-agglomeration step, and optionally a selection step, with a view to improving the techniques used to manufacture polyurethane foams either by foaming without an auxiliary blowing agent or with a blowing agent such as CO2, and composite polyurethane, whilst reducing the time needed to mix this treated filler treated with the polyol and other reagents. Numerous applications for block foams or moulded foams, for mattresses and similar, the automotive industry, various industrial components, etc . . .

Abstract translation: 本发明涉及在该领域中使用的矿物填料的技术领域，其制造聚氨酯泡沫，特别是碳酸盐，氢氧化物，硅酸盐，硫酸盐型和类似的矿物填料的填料。本发明特别涉及一种处理矿物填料的方法 借助于有机磷酸盐类型的处理剂，结合去附聚步骤和任选的选择步骤，特定的晶粒尺寸，以改进用于制造聚氨酯泡沫的技术，无需通过发泡而不需要辅助发泡剂或 使用发泡剂如二氧化碳和复合聚氨酯，同时减少了用多元醇和其他试剂混合处理的填料所需的时间。多种应用于块状泡沫或模制泡沫，床垫等，汽车工业，各种工业 组件等。 。 。

公开(公告)号：US5464895A

公开(公告)日：1995-11-07

申请号：US314905

申请日：1994-09-29

Applicant: Pierre Blanchard ,  Jean-Bernard Egraz ,  Georges Ravet

Inventor： Pierre Blanchard ,  Jean-Bernard Egraz ,  Georges Ravet

IPC: C08K3/00 ,  B01F17/00 ,  C08G65/335 ,  C08K5/52 ,  C08K5/521 ,  C08L67/06 ,  C08L71/00 ,  C08L101/00 ,  C08K3/26 ,  C07F9/02 ,  C08K3/30

CPC classification number: C08L71/00 ,  B01F17/0064 ,  C08G65/335 ,  C08K5/521 ,  C08L67/06

Abstract: A dispersing agent for use in a thermosetting composition, a thermosetting composition containing said dispersing agent, and application thereof to thermosetting composition having no yield point. The dispersing agent acting on mineral fillers and used in filled acrylic or polyester resin-based thermosetting compositions belongs to the family of organophosphates corresponding to the general formula: ##STR1## where: A is a branched or unbranched polyaryl group,x and y are whole numbers between 0 and 100 such that x+y is a whole number greater than 40 but not greater than 100, ##STR2## B and E are independently a branched or unbranched polyaryl group, or an alkyl, aryl, arylalkyl, alkylaryl, alkanoyl, or amine radical, and in B and E, and R.sub.1 and R.sub.2 may be identical or different, x1, y1, x2 and y2 are whole numbers, and the sums x1+y1 and x2+y2 are not greater than 100.

公开(公告)号：US4774199A

公开(公告)日：1988-09-27

申请号：US918931

申请日：1986-10-15

Applicant: Pierre Blanchard ,  Michel Carquet ,  Philippe Warenbourg

Inventor： Pierre Blanchard ,  Michel Carquet ,  Philippe Warenbourg

IPC: H01L29/762 ,  H01L21/339 ,  H01L29/423 ,  H01L29/76 ,  H01L29/772 ,  H01L29/78

CPC classification number: H01L29/66954 ,  H01L29/42396

Abstract: Process of manufacturing a charge transfer device wherein lower electrodes have enlarged portions and narrowed portions which mesh with the mating portions of any adjacent lower electrode, upper electrodes cover the intervals defined between adjacent lower electrodes and at least part of said enlargened portions thereof, these intervals which are not covered by the upper electrodes are subjected to an impurity diffusion.

Abstract translation: 制造电荷转移装置的方法，其中下部电极具有与任何相邻的下部电极的配合部分啮合的扩大部分和变窄的部分，上部电极覆盖相邻的下部电极之间限定的间隔及其所述扩大部分的至少一部分，这些间隔 未被上部电极覆盖的物质进行杂质扩散。

公开(公告)号：US4724218A

公开(公告)日：1988-02-09

申请号：US873679

申请日：1986-06-12

Applicant: Pierre Blanchard ,  Jean P. Cortot

Inventor： Pierre Blanchard ,  Jean P. Cortot

IPC: H01L29/762 ,  H01L21/339 ,  H01L21/60 ,  H01L29/76 ,  H01L29/772 ,  H01L31/10 ,  H01L31/18

CPC classification number: H01L21/76897 ,  H01L29/66954

Abstract: The invention provides a method for forming a semiconductor device having several gate levels, which, in the case of forming a device with two gate levels, comprises the following steps:1. on a semiconductor substrate are deposited a dielectric layer, then a layer of material in which the gates of the first level are to be formed and a dielectric layer;2. the gates of the first level are formed by etching the two upper layers;3. the sides of the gates of the first level are isolated;4. a second layer is deposited of material in which the gates of the second level are to be formed;5. in this second layer an opening is formed giving access to the dielectric layer covering the top of the gates of the first level;6. by plasma etching or by chemical etching the zones of said second layer which overhang the gates of the first layer are removed by etching them simultaneously on their internal and external faces.

Abstract translation: 本发明提供一种用于形成具有多个栅极电平的半导体器件的方法，其在形成具有两个栅极电平的器件的情况下包括以下步骤：1.在半导体衬底上沉积介电层，然后沉积一层 要形成第一级的栅极的材料和介质层; 通过蚀刻两个上层形成第一层的栅极; 第一层门的两侧隔离; 第二层被沉积在其中要形成第二层的栅极的材料上; 在该第二层中，形成一个开口，使得能够接近覆盖第一级门的顶部的电介质层; 通过等离子体蚀刻或通过化学蚀刻，通过在它们的内表面和外表面上同时蚀刻它们来移除在第一层的栅极上突出的所述第二层的区域。

公开(公告)号：US4648941A

公开(公告)日：1987-03-10

申请号：US826120

申请日：1986-02-05

Applicant: Pierre Blanchard

Inventor： Pierre Blanchard

IPC: H01L29/78 ,  H01L21/339 ,  H01L21/8234 ,  H01L27/148 ,  H01L29/417 ,  H01L29/76 ,  H01L29/762 ,  H01L29/772 ,  B44C1/22

CPC classification number: H01L21/8234

Abstract: The process of the invention consists in depositing a doped polycrystalline silicon layer on a silica dielectric which isolates it from the substrate. By photolithographic etching zones are defined which are intended to undergo ionic implantation for the buried channel, the zones to be protected being masked by the remaining silicon.A double silica-nitride layer is formed after the substrate has been bared in the implanted regions;Photolithographic etching of the double silica-nitride layer gives access to the first silicon level of a second doped silicon layer.Photoetching of the whole of the two silicons allows different structures to be formed in which for example the transition zone between the two dielectrics is situated under the same gate or else in which for example the transition zone is self aligned with a gate.

Abstract translation: 本发明的方法在于将掺杂的多晶硅层沉积在二氧化硅电介质上，从而将其与衬底隔离。 通过光刻蚀刻区被定义为要对掩埋沟道进行离子注入，被保护的区被剩余的硅掩蔽。 在衬底裸露在植入区域中之后形成双重二氧化硅 - 氮化物层; 双二氧化硅 - 氮化物层的光刻蚀刻允许访问第二掺杂硅层的第一硅层。 整个两个硅的光刻能够形成不同的结构，其中例如两个电介质之间的过渡区位于相同的栅极之下，或者其中例如过渡区与栅极自对准。

公开(公告)号：US08105917B2

公开(公告)日：2012-01-31

申请号：US12518030

申请日：2007-12-11

Applicant: Pierre Blanchard

Inventor： Pierre Blanchard

IPC: H01L21/30

CPC classification number: H01L27/14636 ,  H01L24/05 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05556 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

Abstract: The invention relates to the fabrication of electronic circuits on a thinned semiconductor substrate. To produce a connection pad on the back side of the thinned substrate, the procedure is as follows: an integrated circuit is produced on an unthinned substrate, in which a portion of a polycrystalline silicon layer (18) dedicated for the connection of the pad is provided. The circuit is transferred onto a transfer substrate (30) and then its back side is thinned. A via is opened in the thinned semiconductor layer (12) in order to gain access to the polycrystalline silicon; aluminum (80) is deposited and this layer is etched so as to define a pad which is in contact with the internal interconnects of the integrated circuit by way of the polycrystalline silicon.

Abstract translation: 本发明涉及在薄型半导体衬底上制造电子电路。 为了在减薄的基板的背面上产生连接焊盘，过程如下：在未固化的衬底上产生集成电路，其中专用于焊盘连接的多晶硅层（18）的一部分是 提供。 电路被转印到转印衬底（30）上，然后将其背面变薄。 在减薄的半导体层（12）中打开通孔，以便进入多晶硅; 沉积铝（80），并且蚀刻该层以限定通过多晶硅与集成电路的内部互连接触的焊盘。