Abstract:
In this transverse charge transfer filter having N MOS capacitors arranged on the same semiconductor substrate and provided with electrodes, the electrode of every other MOS capacitor has its ends covered by the ends of the electrodes of two adjacent MOS capacitors, the N MOS capacitors being arranged in n rows and the charge transfer direction in two adjacent rows being opposite, which makes it possible to compensate for the effects of the displacements of the masks used for manufacturing the transverse charge transfer filters.
Abstract:
The invention relates to small dimension image recorders, such as an image recorder, comprising a matrix of rows and columns of photosensitive points, arranged on a chip of a generally square or rectangular form with believed corners, characterised in comprising a reading register arranged at the base of the matrix. The register is bent to follow the bevelled corners of the chip and thus comprises a horizontal piece and two oblique pieces. The sensor further comprises means (ZIn) to direct the photosensitive charges form the columns terminating opposite the beveled corners towards the stage of the reister situated in the oblique part along the beveled corners. The above is of application to intraoral dental radiological sensors.
Abstract translation:本发明涉及小尺寸图像记录器,诸如图像记录器,其包括布置在大致正方形或矩形形状的芯片上的感知点的行和列的矩阵,其特征在于包括布置在该位置处的读取寄存器 矩阵的基数。 该寄存器被弯曲以跟随芯片的斜角,因此包括水平件和两个倾斜件。 该传感器还包括用于将光敏电荷从沿着倾斜角转向的倾斜部分的反射器的台面引导到与倾斜角相反的列的装置(ZI N n N)。 以上适用于口腔内放射性传感器。
Abstract:
The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases:formation of a dielectric layer on a substrate;formation of semiconducting or conducting elements which are to serve as mask for implantation;implantation;formation of a layer of conducting or semiconducting material;cutting out electrodes from said layer and from the semiconducting or conducting elements.