发明授权
- 专利标题： Positive photoresist system for near-UV to visible imaging
- 专利标题（中）： 用于近紫外到可见成像的正性光致抗蚀剂系统
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申请号： US761183申请日： 1991-09-17
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公开(公告)号： US5272042A公开(公告)日： 1993-12-21
- 发明人: Robert D. Allen , William R. Brunsvold , Burton J. Carpenter , William D. Hinsberg , Joseph LaTorre , Michael G. McMaster , Melvin W. Montgomery , Wayne M. Moreau , Logan L. Simpson , Robert J. Tweig , Gregory M. Wallraff
- 申请人： Robert D. Allen , William R. Brunsvold , Burton J. Carpenter , William D. Hinsberg , Joseph LaTorre , Michael G. McMaster , Melvin W. Montgomery , Wayne M. Moreau , Logan L. Simpson , Robert J. Tweig , Gregory M. Wallraff
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/038 ; G03F7/039 ; H01L21/027 ; H01L21/30 ; G03C1/73
摘要：
Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.
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