发明授权
- 专利标题： Method of making semiconductor integrated-circuit capacitor
- 专利标题（中）： 制造半导体集成电路电容器的方法
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申请号： US420649申请日： 1995-04-12
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公开(公告)号： US5641702A公开(公告)日： 1997-06-24
- 发明人: Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
- 申请人： Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-191117 19920717; JPX5-164726 19930702
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/02 ; H01L21/316 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/10 ; H01L27/108 ; H01L29/49 ; H01L29/92 ; H01L21/70 ; H01L27/00
摘要：
A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.
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