发明授权
- 专利标题： Vapor depositing method
- 专利标题（中）： 气相沉积法
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申请号： US393821申请日： 1995-01-31
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公开(公告)号： US5705224A公开(公告)日： 1998-01-06
- 发明人: Junichi Murota , Shoichi Ono , Masao Sakuraba , Nobuo Mikoshiba , Harushige Kurokawa , Fumihide Ikeda
- 申请人： Junichi Murota , Shoichi Ono , Masao Sakuraba , Nobuo Mikoshiba , Harushige Kurokawa , Fumihide Ikeda
- 申请人地址： JPX Tokyo
- 专利权人： Kokusai Electric Co., Ltd.
- 当前专利权人： Kokusai Electric Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-56931 19910320
- 主分类号： C23C16/48
- IPC分类号： C23C16/48 ; C30B25/10 ; C30B23/00 ; C23C16/00
摘要：
A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.
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