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33 条记录 (耗时 0.037 秒)

    Integrated circuit
    2.
    发明授权
    Integrated circuit 失效
    集成电路

    公开(公告)号：US5245207A

    公开(公告)日：1993-09-14

    申请号：US568956

    申请日：1990-08-17

    申请人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    发明人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    IPC分类号： H01L27/088 ,  H01L29/49

    CPC分类号： H01L29/49 ,  H01L27/0883 ,  H01L29/4916 ,  H01L29/4966 ,  H01L29/4975

    摘要： A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.

    摘要翻译： 即使在室温或液氮温度下也可以通过使用耗尽型MOSFET来实现耗尽操作，而不会在与栅极电极下方的沟道部分掺杂具有与半导体衬底的导电类型相反的导电类型的杂质。 此外，该FET可以与增强型FET一起构造逆变器，并且它们可以集成在一个衬底上。

    Scanning type tunnel microscope
    3.
    发明授权
    Scanning type tunnel microscope 失效
    扫描型隧道显微镜

    公开(公告)号：US4877957A

    公开(公告)日：1989-10-31

    申请号：US70775

    申请日：1987-07-07

    申请人： Takao Okada ,  Toshihito Kouchi ,  Shuzo Mishima ,  Haruo Ogawa ,  Seizo Morita ,  Nobuo Mikoshiba

    发明人： Takao Okada ,  Toshihito Kouchi ,  Shuzo Mishima ,  Haruo Ogawa ,  Seizo Morita ,  Nobuo Mikoshiba

    IPC分类号： G01Q10/00 ,  G01Q40/02 ,  G01Q30/08 ,  G01Q60/16 ,  H01J37/26

    CPC分类号： G01Q60/16 ,  B82Y35/00 ,  Y10S977/861 ,  Y10S977/872

    摘要： A scanning type tunnel microscope comprises a sample holding member for supporting a sample and a scanning probe which is arranged to face the sample to be separated therefrom by a very small distance and a supported by a scanning probe holding member. A tunnel current is flowed between the sample and scanning probe upon application of a voltage thereacross. A first actuator is coupled to the sample holding member and a second actuator is coupled to the scanning probe holding member so that the first and second actuators relatively drive said sample and said scanning probe in an axial direction and in a planar direction through said sample holding member and said scanning probe holding member. A differential micrometer is connected to the first actuator to move the actuator in the axial direction, and the micrometer and the second actuator are fixed on a substrate.

    摘要翻译： 扫描型隧道显微镜包括用于支撑样本的样本保持构件和扫描探针，扫描探针被布置成面对要被分离的样本非常小的距离并由扫描探针保持构件支撑。 在施加电压之间时，隧道电流在样品和扫描探针之间流动。 第一致动器联接到样品保持构件，第二致动器联接到扫描探针保持构件，使得第一和第二致动器沿轴向方向和平面方向相对地驱动所述样品和扫描探针通过所述样品保持 构件和扫描探针保持构件。 差动千分尺连接到第一致动器以使致动器沿轴向移动，千分尺和第二致动器固定在基板上。

    Multi-layer acoustic surface wave device having minimal delay time temperature coefficient
    4.
    发明授权
    Multi-layer acoustic surface wave device having minimal delay time temperature coefficient 失效
    具有最小延迟时间温度系数的多层声表面波器件

    公开(公告)号：US4516049A

    公开(公告)日：1985-05-07

    申请号：US536926

    申请日：1983-09-28

    申请人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuyoshi Sugai

    发明人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuyoshi Sugai

    IPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  H03H9/42

    CPC分类号： H03H9/02834 ,  H03H9/02574

    摘要： An acoustic surface wave device includes a substrate made of an elastic material, a multilayer structure disposed on a surface of the substrate and having a silicon dioxide layer and an aluminum nitride layer superimposed on each other, and electrodes having predetermined configurations formed on the multilayer structure. The main component of the elastic material is a silicon monocrystal, whose temperature coefficient of delay time for acoustic surface waves is positive, and the piezo-electric axis of the aluminum nitride is either perpendicular or parallel to the surface of the substrate, with a negative delay coefficient, counteracting that of the substrate.

    摘要翻译： 声表面波装置包括由弹性材料制成的基板，设置在基板的表面上并具有彼此重叠的二氧化硅层和氮化铝层的多层结构，以及形成在多层结构上的具有预定构造的电极 。 弹性材料的主要成分是硅单晶，其声表面波的延迟时间的温度系数为正，氮化铝的压电轴线垂直于或平行于衬底的表面，负极 延迟系数，抵消衬底的延迟系数。

    Scanning tunneling potentio-spectroscopic microscope and a data detecting method
    6.
    发明授权
    Scanning tunneling potentio-spectroscopic microscope and a data detecting method 失效
    扫描隧道电子显微镜和数据检测方法

    公开(公告)号：US5185572A

    公开(公告)日：1993-02-09

    申请号：US585880

    申请日：1990-09-20

    申请人： Akira Yagi ,  Takao Okada ,  Seizo Morita ,  Nobuo Mikoshiba

    发明人： Akira Yagi ,  Takao Okada ,  Seizo Morita ,  Nobuo Mikoshiba

    IPC分类号： G01Q60/12 ,  G01B7/34 ,  G01Q30/04 ,  G01Q60/14

    CPC分类号： G01Q60/12 ,  B82Y35/00 ,  G01B7/34 ,  G01Q30/04 ,  G01Q60/14 ,  Y10S977/852

    摘要： A bias voltage U.sub.B including a sine-wave voltage U.sub.T sin.omega. .sub.o t and an off-set voltage U.sub.REG is applied to an electrode on a sample. A potential U.sub.1 of the electrode is represented by: U.sub.1 =U.sub.REG +U.sub.T sin.omega. .sub.o t. A voltage including the bias voltage U.sub.B and a voltage .DELTA.U is applied to an electrode on the sample. A probe is approached to the sample by several nm, and a tunnel current I.sub.T flows therebetween. And the probe scans the surface of the sample. During the scan, the position of the probe is servo-controlled in the z-direction, to make constant the average absolute value of the tunnel current. The servo voltage is recorded thereby obtaining an STM image. Given that the potential difference between the electrode and a surface portion facing the probe is U.sub.S (x), the average of U.sub.1 +U.sub.S (x) becomes zero when the average of the tunnel current I.sub.T is zero. Accordingly, =0, that is, U.sub.S (x)=-U.sub.REG. Thus, by recording-U.sub.REG the potential distribution U.sub.S (x) on the sample surface is determined. Spectroscopic data is obtained by an analog operation unit, on the basis of a differential conductance .differential.I.sub.T /.differential.U.sub.T calculated from the tunnel current signal I.sub.T and the bias voltage U.sub.T.

    Plasma CVD of aluminum films
    8.
    发明授权
    Plasma CVD of aluminum films 失效
    铝膜等离子体CVD

    公开(公告)号：US5091210A

    公开(公告)日：1992-02-25

    申请号：US584637

    申请日：1990-09-19

    申请人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    发明人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    IPC分类号： C23C16/20 ,  C23C16/452 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285

    CPC分类号： C23C16/452 ,  C23C16/20

    摘要： A deposited film formation method which forms an aluminum film by use of the plasma CVD method,wherein a substrate having an electron donative surface (A) and a non-electron donative surface (B) is arranged in a space for deposited film formation having a portion which is increased in cross-sectional area toward said substrate is arranged, and a gas of trimethylaluminum and hydrogen gas are introduced into said space for deposited film formation to deposit an aluminum film selectively on said electron donative surface (A).A deposited film formation method which forms an aluminum film by use of the plasma CVD method, comprising:(a) the step of arranging a substrate having an electron donative surface (a) and a non-electron donative surface (B) in a space for deposited film formation equipped with a reverse flow preventive means into plasma, and(b) the step of introducing a gas of trimethylaluminum and hydrogen gas into said space for deposited film formation, said aluminum film being selectively formed on said electron donative surface (A).

    摘要翻译： 使用等离子体CVD法形成铝膜的沉积膜形成方法，其中具有给电子表面（A）和非电子给体表面（B）的基板被布置在用于沉积膜形成的空间中，具有 布置了朝向所述基板的横截面面积增加的部分，并且将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中以在所述给电子表面（A）上选择性地沉积铝膜。 一种通过使用等离子体CVD法形成铝膜的沉积膜形成方法，包括：（a）将具有给电子表面（a）和非电子给体表面（B）的衬底排列在空间中的步骤 （b）将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中的步骤，所述铝膜选择性地形成在所述给电子表面（A ）。

    Crystal defects analyzer
    9.
    发明授权
    Crystal defects analyzer 失效
    水晶缺陷分析仪

    公开(公告)号：US4448525A

    公开(公告)日：1984-05-15

    申请号：US277645

    申请日：1981-06-26

    申请人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kenji Wasa

    发明人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kenji Wasa

    IPC分类号： G01N21/00 ,  G01N21/17 ,  G01N21/87 ,  G01N23/225 ,  G01N29/00 ,  G01N29/24 ,  G01N29/04

    CPC分类号： G01N29/2425 ,  G01N21/1702 ,  G01N2291/02863 ,  G01N2291/0289 ,  G01N2291/0426

    摘要： A crystal defect analyzer comprises acousto-electric transducer means disposed in close adherence to a sample to be analyzed through the medium of a filter layer which functions to intercept light or electrons or particles emitted from said excitation means and to transmit only acoustic waves produced within said sample by excitation, thereby it can attain higher response and sensitivity, smaller size, higher resistance to vibration and superior operationality.

    摘要翻译： 晶体缺陷分析仪包括声电传感器装置，其通过滤光层的介质紧密地附着于要分析的样品，该滤光层用于截取从所述激发装置发出的光或电子或粒子，并且仅传输由所述激光装置产生的声波 通过激励采样，从而可以获得更高的响应和灵敏度，更小的尺寸，更高的抗振动性和更好的操作性。

    Frequency selector apparatus
    10.
    发明授权
    Frequency selector apparatus 失效
    频率选择装置

    公开(公告)号：US4288765A

    公开(公告)日：1981-09-08

    申请号：US44513

    申请日：1979-06-01

    申请人： Nobuo Mikoshiba ,  Shoichi Minagawa

    发明人： Nobuo Mikoshiba ,  Shoichi Minagawa

    IPC分类号： H03H9/25 ,  H03H3/08 ,  H03H9/02 ,  H03H9/05 ,  H03H9/145 ,  H03H9/64 ,  H03H9/72 ,  H03F7/00 ,  H03H9/68

    CPC分类号： H03H9/02574

    摘要： A frequency selector apparatus which effects a frequency selection by providing at least one reflecting electrode at a position adjacent elastic surface wave transducer or transducers provided in an acoustic wave propagation track in a piezoelectric medium so as to reflect a frequency component selected by a parametric interaction with an a.c. electrical signal applied to said reflecting electrode.

    摘要翻译： 一种频率选择装置，其通过在与压电介质中的声波传播轨道中设置的弹性表面波换能器或换能器相邻的位置处设置至少一个反射电极来进行频率选择，以便反映通过参数相互作用选择的频率分量 一个ac 电信号施加到所述反射电极。