公开(公告)号：US5705224A

公开(公告)日：1998-01-06

申请号：US393821

申请日：1995-01-31

申请人： Junichi Murota ,  Shoichi Ono ,  Masao Sakuraba ,  Nobuo Mikoshiba ,  Harushige Kurokawa ,  Fumihide Ikeda

发明人： Junichi Murota ,  Shoichi Ono ,  Masao Sakuraba ,  Nobuo Mikoshiba ,  Harushige Kurokawa ,  Fumihide Ikeda

IPC分类号： C23C16/48 ,  C30B25/10 ,  C30B23/00 ,  C23C16/00

CPC分类号： C30B25/105 ,  C23C16/482 ,  C30B29/08

摘要： A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.

摘要翻译： 一种气相沉积设备和方法，其中脉冲波形光被施加到密封在反应室中的样品。 样品暴露于气体材料，同时施加脉冲波形光产生一个或多个原子层。 可以通过施加脉冲波形光交替引入气态材料来形成多个物质的交替层或多个物质的交替多层。

公开(公告)号：US06864463B2

公开(公告)日：2005-03-08

申请号：US10210558

申请日：2002-07-31

申请人： Fumihide Ikeda

发明人： Fumihide Ikeda

IPC分类号： H01L21/285 ,  H01L21/00 ,  H01L21/26 ,  H01L21/31 ,  H01L21/66 ,  F27B5/14

CPC分类号： H01L21/67248 ,  H01L21/67115 ,  H01L22/20

摘要： Emissivity of a substrate is measured at least before the substrate is heated, heating operation of the substrate is controlled under a heating condition corresponding to the emissivity, and the substrate is processed.

摘要翻译： 至少在加热基板之前测量基板的发射率，在对应于发射率的加热条件下控制基板的加热操作，并且处理基板。

公开(公告)号：US06462411B1

公开(公告)日：2002-10-08

申请号：US09205299

申请日：1998-12-04

申请人： Tomoji Watanabe ,  Nobuyuki Mise ,  Toshiyuki Uchino ,  Norio Suzuki ,  Yoshihiko Sakurai ,  Toshiya Uenishi ,  Yohsuke Inoue ,  Yasuhiro Inokuchi ,  Fumihide Ikeda

发明人： Tomoji Watanabe ,  Nobuyuki Mise ,  Toshiyuki Uchino ,  Norio Suzuki ,  Yoshihiko Sakurai ,  Toshiya Uenishi ,  Yohsuke Inoue ,  Yasuhiro Inokuchi ,  Fumihide Ikeda

IPC分类号： H01L2334

CPC分类号： H01L21/67748 ,  H01L21/67109 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  Y10T29/41

摘要： A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.

摘要翻译： 半导体晶片处理装置包括能够在其内部加热的反应炉，用于将半导体晶片安装在其上的晶片载体和转印装置。 所述瓦台车包括比所述半导体晶片大的开口部，该开口部具有与所述半导体晶片的外周大致相同的圆形或形状，并且具有向所述开口的内侧突出以支撑所述半导体晶片的晶片支撑部。 传送装置能够从垂直方向观察时将晶片安装体保持在半导体晶片外部，并将承载半导体晶片的晶片载体基本水平地转移到反应炉内和/或从反应炉出来。

公开(公告)号：US5960159A

公开(公告)日：1999-09-28

申请号：US950185

申请日：1997-10-14

申请人： Fumihide Ikeda ,  Junichi Machida ,  Masayuki Tomita ,  Yasuhiro Inokuchi ,  Kazuhiro Shimeno ,  Hisashi Nomura ,  Tetsuaki Inada

发明人： Fumihide Ikeda ,  Junichi Machida ,  Masayuki Tomita ,  Yasuhiro Inokuchi ,  Kazuhiro Shimeno ,  Hisashi Nomura ,  Tetsuaki Inada

IPC分类号： H01L21/00 ,  F26B3/30

CPC分类号： H01L21/67109

摘要： A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.

摘要翻译： 基板处理装置包括：具有上基板支撑基座的基板支撑基座和垂直堆叠的下基板支撑基座;上电阻加热器，设置在上基板支撑基座的上方，以与上基板支撑基座相对;以及 设置在下基板支撑基座下方以与下基板支撑基座相对的下电阻加热器。 上基板支撑基座和下基板支撑基座中的每一个能够将基板或基板安装在基本水平的位置，并且下基板支撑基座包括将基板全部曝光的开口或露出基板的开口 它们的整体从下基板支撑底座下方观察。

公开(公告)号：US06270581B1

公开(公告)日：2001-08-07

申请号：US09022620

申请日：1998-02-12

申请人： Yasuhiro Inokuchi ,  Fumihide Ikeda

发明人： Yasuhiro Inokuchi ,  Fumihide Ikeda

IPC分类号： B05C1100

CPC分类号： C30B29/06 ,  C30B33/005

摘要： A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas; a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit, so as to supply either one of the water vapor and the inert gas to the gas supply passage; and a control unit controlling such that: at least while wet-oxidation processing of the semiconductor wafer are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates the water vapor; whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is switched toward the gas supply passage; and whenever the wet-oxidation processing is completed one time, the water vapor from the water vapor generating apparatus is switched toward the discharge passage, and the inert gas from the inert gas supply unit is supplied to the gas supply passage.

公开(公告)号：US6139641A

公开(公告)日：2000-10-31

申请号：US881147

申请日：1997-06-24

申请人： Yasuhiro Inokuchi ,  Fumihide Ikeda

发明人： Yasuhiro Inokuchi ,  Fumihide Ikeda

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/4557 ,  H01L21/67109

摘要： A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.

摘要翻译： 基板处理装置包括加热构件，设置在加热构件中的反应管体，具有第一气体导入部和排气部，设置在反应管主体中的基板保持件，用于水平地保持反应管体内的基板 在所述第一气体导入部和所述排气部之间设置有沿着所述反应管体设置在所述加热部件中的气体加热管，并且具有第二气体导入部和与所述第一气体导入部连通的气体排出部， 反应管体，气体加热管被布置成使得在气体加热管中流动的气体首先从第一气体引入部分侧朝向排气部侧流动，然后从气体排出部分侧朝向 第一气体导入部侧。

公开(公告)号：US5387265A

公开(公告)日：1995-02-07

申请号：US966721

申请日：1992-10-26

申请人： Satoshi Kakizaki ,  Toshikazu Karino ,  Shoichiro Izumi ,  Mikio Koizumi ,  Makoto Ozawa ,  Fumihide Ikeda ,  Tohru Yoshida ,  Ryoji Saito

发明人： Satoshi Kakizaki ,  Toshikazu Karino ,  Shoichiro Izumi ,  Mikio Koizumi ,  Makoto Ozawa ,  Fumihide Ikeda ,  Tohru Yoshida ,  Ryoji Saito

IPC分类号： C23C16/54 ,  H01L21/677 ,  H01L21/68 ,  C23C16/00

CPC分类号： H01L21/67757 ,  C23C16/54 ,  H01L21/67769 ,  Y10S414/14 ,  Y10T29/41

摘要： In the semiconductor manufacturing apparatus according to the present invention, there are provided a cassette stocker for accommodating wafer cassettes loaded with wafers, a reaction furnace provided with heating means, a reaction gas introducing means for introducing reaction gas into the reaction furnace, a gas discharging means for discharging exhaust gas in the reaction furnace, a boat for supporting wafers, a buffer cassette stocker for storing unprocessed wafers, a boat elevating means for inserting the boat into and retrieving the boat from the reaction furnace, a wafer transfer means for transferring wafers between the boat and the wafer cassette accommodated on the cassette stocker, and a wafer cassette transfer means for transferring wafer cassettes between the buffer cassette stocker and the cassette stocker, and the buffer cassette stocker is enclosed to provide an antioxidation area to prevent natural oxidation of the wafers in standby status.

摘要翻译： 在根据本发明的半导体制造装置中，提供一种用于容纳装载有晶片的晶片盒的盒式储存器，具有加热装置的反应炉，将反应气体引入反应炉的反应气体引入装置， 用于在反应炉中排出废气的装置，用于支撑晶片的船，用于存储未加工的晶片的缓冲盒储料器，用于将船从反应炉中插入和取回船的船升降装置，用于转移晶片的晶片传送装置 在容纳在盒式存储器上的船和晶片盒之间，以及用于在缓冲盒式存储器和盒式存储器之间传送晶片盒的晶片盒传送装置，并且缓冲盒式储存器被封闭以提供抗氧化区域以防止自然氧化 晶圆处于待机状态。

公开(公告)号：US06332927B1

公开(公告)日：2001-12-25

申请号：US09668353

申请日：2000-09-25

申请人： Yasuhiro Inokuchi ,  Fumihide Ikeda

发明人： Yasuhiro Inokuchi ,  Fumihide Ikeda

IPC分类号： C23C1600

CPC分类号： C23C16/4557 ,  H01L21/67109

摘要： A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.

摘要翻译： 基板处理装置包括加热构件，设置在加热构件中的反应管体，具有第一气体导入部和排气部，设置在反应管主体中的基板保持件，用于水平地保持反应管体内的基板 在所述第一气体导入部和所述排气部之间设置有沿着所述反应管体设置在所述加热部件中的气体加热管，并且具有第二气体导入部和与所述第一气体导入部连通的气体排出部， 反应管体，气体加热管被布置成使得在气体加热管中流动的气体首先从第一气体引入部分侧朝向排气部侧流动，然后从气体排出部分侧向 第一气体导入部侧。

公开(公告)号：US06217663B1

公开(公告)日：2001-04-17

申请号：US08879932

申请日：1997-06-20

申请人： Yasuhiro Inokuchi ,  Fumihide Ikeda ,  Michiko Nishiwaki ,  Masatoshi Takada ,  Mamoru Sueyoshi

发明人： Yasuhiro Inokuchi ,  Fumihide Ikeda ,  Michiko Nishiwaki ,  Masatoshi Takada ,  Mamoru Sueyoshi

IPC分类号： C23C1600

CPC分类号： H01L21/68707 ,  H01L21/67167 ,  H01L21/67745 ,  H01L21/67781 ,  H01L21/68721 ,  H01L21/68735

摘要： A substrate processing apparatus comprises a hot-wall type processing chamber for processing a substrate, a heater capable of heating an interior of the processing chamber, a substrate holder capable of holding the substrate and processing the substrate in the processing chamber in a state where the substrate holder holds the substrate, and a mechanism, which is capable of allowing the substrate holder to hold the substrate and then transferring the substrate holder holding the substrate into the processing chamber, and/or which is capable of carrying out the substrate holder from the processing chamber in a state where the substrate holder holds the substrate, and then separating the substrate from the substrate holder.

摘要翻译： 基板处理装置包括用于处理基板的热壁型处理室，能够加热处理室内部的加热器，能够保持基板并在该处理室内处理基板的基板保持器，其中， 衬底保持器保持衬底，以及机构，其能够允许衬底保持器保持衬底，然后将保持衬底的衬底保持器转移到处理室中，和/或能够从衬底保持器 处理室，其中衬底保持器保持衬底，然后将衬底与衬底保持器分离。

公开(公告)号：US6132553A

公开(公告)日：2000-10-17

申请号：US90216

申请日：1998-06-04

申请人： Fumihide Ikeda ,  Yasuhiro Inokuchi

发明人： Fumihide Ikeda ,  Yasuhiro Inokuchi

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/3065 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01L21/67011

摘要： A substrate processing apparatus includes a reaction container for processing a substrate therein. The reaction container is provided with two open ends. The reaction container includes a central cylindrical body and two flanges respectively provided at the both open ends. The central cylindrical body includes at its both ends thin portion which are thinner than the central portion of the central cylindrical body, the flanges are respectively provided with flange connecting portions which are thinner than the central portion of the central cylindrical body, and the thin portions of the central cylindrical body and the flange connecting portions are welded together.

摘要翻译： 基板处理装置包括用于在其中处理基板的反应容器。 反应容器设有两个开口端。 反应容器包括分别设置在两个开口端的中心圆柱体和两个凸缘。 中心圆柱体的两端薄部分比中心圆筒体的中心部分薄，凸缘分别设有比中心圆柱体的中心部分更薄的凸缘连接部分，薄壁部分 的中心圆柱体和法兰连接部分焊接在一起。