Invention Grant
- Patent Title: Sockets for electronic components and methods of connecting to electronic components
- Patent Title (中): 电子元件插座和连接电子元器件的方法
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Application No.: US533584Application Date: 1995-10-18
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Publication No.: US5772451APublication Date: 1998-06-30
- Inventor: Thomas H. Dozier, II , Benjamin N. Eldridge , Gary W. Grube , Igor Y. Khandros , Gaetan L. Mathieu
- Applicant: Thomas H. Dozier, II , Benjamin N. Eldridge , Gary W. Grube , Igor Y. Khandros , Gaetan L. Mathieu
- Applicant Address: CA Livermore
- Assignee: Form Factor, Inc.
- Current Assignee: Form Factor, Inc.
- Current Assignee Address: CA Livermore
- Main IPC: B23K20/00
- IPC: B23K20/00 ; C23C18/16 ; C25D5/08 ; C25D5/22 ; C25D7/12 ; C25D21/02 ; G01R1/04 ; G01R1/067 ; G01R1/073 ; G01R3/00 ; G01R31/28 ; H01L21/00 ; H01L21/48 ; H01L21/56 ; H01L21/60 ; H01L21/603 ; H01L21/66 ; H01L23/48 ; H01L23/485 ; H01L23/49 ; H01L23/498 ; H01L25/065 ; H01L25/16 ; H05K1/14 ; H05K3/20 ; H05K3/30 ; H05K3/32 ; H05K3/34 ; H05K3/36 ; H05K3/40 ; H05K7/10 ; H01R9/09
Abstract:
Surface-mount, solder-down sockets permit electronic components such as semiconductor packages to be releasably mounted to a circuit board. Resilient contact structures extend from a top surface of a support substrate, and solder-ball (or other suitable) contact structures are disposed on a bottom surface of the support substrate. Composite interconnection elements are used as the resilient contact structures disposed atop the support substrate. In any suitable manner, selected ones of the resilient contact structures atop the support substrate are connected, via the support substrate, to corresponding ones of the contact structures on the bottom surface of the support substrate. In an embodiment intended to receive a LGA-type semiconductor package, pressure contact is made between the resilient contact structures and external connection points of the semiconductor package with a contact force which is generally normal to the top surface of the support substrate. In an embodiment intended to receive a BGA-type semiconductor package, pressure contact is made between the resilient contact structures and external connection points of the semiconductor package with a contact force which is generally parallel to the top surface of the support substrate.
Public/Granted literature
- US4454002A Controlled thermal-oxidation thinning of polycrystalline silicon Public/Granted day:1984-06-12
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