发明授权
- 专利标题： Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring
- 专利标题（中）： 用阳极氧化钪掺杂铝线制造电子电路的工艺
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申请号： US654030申请日： 1996-05-28
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公开(公告)号： US5830786A公开(公告)日： 1998-11-03
- 发明人: Hongyong Zhang , Hideki Uochi , Shunpei Yamazaki , Yasuhiko Takemura , Minoru Miyazaki , Akane Murakami , Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
- 申请人： Hongyong Zhang , Hideki Uochi , Shunpei Yamazaki , Yasuhiko Takemura , Minoru Miyazaki , Akane Murakami , Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX5-056455 19930222; JPX5-263024 19930927
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/28 ; H01L21/3213 ; H01L21/336 ; H01L21/76 ; H01L29/49 ; H01L21/3215
摘要：
A process for fabricating an electronic circuit by oxidizing the surroundings of a metallic interconnection such as of aluminum, tantalum, and titanium, wherein anodic oxidation is effected at a temperature not higher than room temperature, preferably, at 10.degree. C. or lower, and more preferably, at 0.degree. C. or lower. The surface oxidation rate of a metallic interconnection can be maintained constant to provide a surface free of irregularities.
公开/授权文献
- USD247532S Display rack 公开/授权日：1978-03-21
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