公开(公告)号：US07897972B2

公开(公告)日：2011-03-01

申请号：US12476445

申请日：2009-06-02

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L29/04 ,  H01L29/10

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 由铝构成的第二层形成在第一层的顶部。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US07045399B2

公开(公告)日：2006-05-16

申请号：US10620420

申请日：2003-07-17

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L21/00 ,  H01L21/8242 ,  H01L29/80 ,  H01L33/00

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

公开(公告)号：US5808315A

公开(公告)日：1998-09-15

申请号：US770126

申请日：1996-12-19

申请人： Akane Murakami ,  Baochun Cui ,  Minoru Miyazaki

发明人： Akane Murakami ,  Baochun Cui ,  Minoru Miyazaki

IPC分类号： H01L21/285 ,  H01L29/45 ,  H01L31/18 ,  H01L29/04

CPC分类号： H01L21/285 ,  H01L29/458 ,  H01L31/1884 ,  Y02E10/50

摘要： According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200.degree. C.

摘要翻译： 根据透明导电膜形成方法，在室温下通过溅射法形成ITO（氧化铟锡）薄膜后，在氢气氛下，在合适的温度例如高于 200℃

公开(公告)号：US5580800A

公开(公告)日：1996-12-03

申请号：US213060

申请日：1994-03-15

申请人： Hongyong Zhang ,  Yasuhiko Takemura ,  Hideki Uochi ,  Itaru Koyama ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Hongyong Zhang ,  Yasuhiko Takemura ,  Hideki Uochi ,  Itaru Koyama ,  Minoru Miyazaki ,  Akane Murakami ,  Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/49 ,  H01L21/306

CPC分类号： H01L21/02071 ,  H01L21/28079 ,  H01L21/32134 ,  H01L29/4908 ,  H01L29/66757 ,  Y10S148/051

摘要： A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb group element. Residues produced by the etching of the silicon-containing aluminum gate electrode are etched with a mixture solution of hydrofluoric acid, nitric acid and acetic acid. After contact holes have been formed in an interlayer insulating film, laser annealing is carried out, and metal electrodes are formed in the contact holes thereafter.

摘要翻译： 根据本发明的薄膜晶体管具有包括高纯度超过99.5％的低铝层的下电极和含有超过0.5％硅的上层铝的栅电极。 或者，其具有通过将IIIa族元素添加到IIIb族元素而制成的栅电极。 通过蚀刻含硅铝栅电极产生的残留物用氢氟酸，硝酸和乙酸的混合溶液进行蚀刻。 在层间绝缘膜中形成接触孔之后，进行激光退火，此后在接触孔中形成金属电极。

公开(公告)号：US07547916B2

公开(公告)日：2009-06-16

申请号：US11447955

申请日：2006-06-07

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L29/76

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 由铝构成的第二层形成在第一层的顶部。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US20050145847A1

公开(公告)日：2005-07-07

申请号：US11022882

申请日：2004-12-28

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L21/28 ,  C23C14/34 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/35 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/70 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/092 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H05B33/08 ,  H05B33/10 ,  H05B33/12 ,  H05B33/26 ,  H01L29/74

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 由铝构成的第二层形成在第一层的顶部。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US06608353B2

公开(公告)日：2003-08-19

申请号：US10193162

申请日：2002-07-12

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L2701

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 由铝构成的第二层形成在第一层的顶部。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US06448612B1

公开(公告)日：2002-09-10

申请号：US09703594

申请日：2000-11-02

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L2701

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 在第一层的顶部上形成由铝组成的第二层。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US5677240A

公开(公告)日：1997-10-14

申请号：US453560

申请日：1995-05-26

申请人： Akane Murakami ,  Baochun Cui ,  Minoru Miyazaki

发明人： Akane Murakami ,  Baochun Cui ,  Minoru Miyazaki

IPC分类号： C23C14/58 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01B5/14 ,  H01B13/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/324 ,  H01L21/336 ,  H01L29/40 ,  H01L29/45 ,  H01L29/78 ,  H01L29/786 ,  H01L31/18 ,  H01L21/44

CPC分类号： H01L21/285 ,  H01L29/458 ,  H01L29/66757 ,  H01L31/1884 ,  Y02E10/50

摘要： According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200.degree. C.

摘要翻译： 根据透明导电膜形成方法，在室温下通过溅射法形成ITO（氧化铟锡）薄膜后，在氢气氛下，在合适的温度例如高于 200℃

公开(公告)号：US5623157A

公开(公告)日：1997-04-22

申请号：US483049

申请日：1995-06-07

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L21/28 ,  C23C14/34 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/35 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/70 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/092 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H05B33/08 ,  H05B33/10 ,  H05B33/12 ,  H05B33/26 ,  H01L29/76 ,  H01L27/01 ,  H01L29/94

CPC分类号： H01L23/53223 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  G02F1/1368 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 在第一层的顶部上形成由铝组成的第二层。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。