发明授权
- 专利标题： Method of forming a thin film
- 专利标题（中）： 形成薄膜的方法
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申请号： US09657627申请日： 2000-09-08
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公开(公告)号： US06866882B1公开(公告)日： 2005-03-15
- 发明人: Hiroshi Shinriki , Kenji Matsumoto
- 申请人： Hiroshi Shinriki , Kenji Matsumoto
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 优先权： JP11-066552 19990312
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; C23C16/02 ; C23C16/40 ; C23C16/448 ; H01L21/00 ; H01L21/31 ; H01L21/314 ; H01L21/316 ; H01L21/822 ; H01L21/8242 ; H01L27/04 ; H01L27/10 ; H01L27/108 ; H01L29/788 ; H01L29/792 ; B05D5/12
摘要：
The vacuum degree in a reactor is set to as low as 0.1 Torr. In this state, a butyl acetate solution in which Pb(DPM)2 is dissolved at a concentration of 0.1 mol is transported from a Pb source generator to an evaporator, while the flow rate of the butyl acetate solution is controlled to a predetermined flow rate by a massflow controller, to evaporate the Pb(DPM)2 dissolved together with the butyl acetate by the evaporator. Helium gas is added to these at a flow rate of 250 sccm, and the mixed gas is transported to a shower head. With this operation, source gases are supplied to a wafer in the reactor, while the partial pressure of each source gas is set low.