公开(公告)号：US07354622B2

公开(公告)日：2008-04-08

申请号：US10311880

申请日：2001-06-25

申请人： Hiroshi Shinriki ,  Kenji Matsumoto ,  Toru Tatsumi

发明人： Hiroshi Shinriki ,  Kenji Matsumoto ,  Toru Tatsumi

IPC分类号： C23C16/00

CPC分类号： H01L21/31691 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C30B25/14

摘要： A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate side surface of the shower head.

摘要翻译： 具有多个用于将均匀密度的有机金属气体供给到基板表面的喷头，并且在MOCVD的反应炉中设置多个用于以均匀密度供给氧化气体的喷射孔 系统。 在淋浴头的基板侧表面附近设置用于将内部加热到高于有机金属气体的热分解点但低于成膜温度的温度的加热器。

公开(公告)号：US06800139B1

公开(公告)日：2004-10-05

申请号：US09830121

申请日：2001-07-16

申请人： Hiroshi Shinriki ,  Kenji Matsumoto

发明人： Hiroshi Shinriki ,  Kenji Matsumoto

IPC分类号： C23C1600

CPC分类号： C23C16/45519 ,  C23C16/409 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45589

摘要： A film deposition apparatus (2) forms a PZT film at a high deposition rate under a low temperature by using a single showerhead (50) throughout the deposition process. Process gases including a raw material gas and an oxidant gas are introduced into a process chamber (4) in which a wafer (W) is accommodated. The process chamber (4) is maintained at a predetermined vacuum during the film depositing process. A gas injection surface (57) of the shower head (50) from which the process gases are injected is divided into an inner zone (84) covering a center portion of the wafer (W) and an outer zone (86) surrounding the inner zone (84). The raw material gas is separately injected from the inner zone (84) and the outer zone (86), and the oxidant gas is separately injected from the inner zone (84) and the-outer zone (86).

摘要翻译： 成膜装置（2）通过在整个沉积工艺中使用单个喷头（50），在低温下以高沉积速率形成PZT膜。 包括原料气体和氧化剂气体的处理气体被引入容纳晶片（W）的处理室（4）中。 在成膜过程中，处理室（4）保持在预定的真空度。 喷射头（50）的气体注入表面（57）被分成覆盖晶片（W）的中心部分的内部区域（84）和围绕内部区域（86）的外部区域（86） 区（84）。 从内部区域（84）和外部区域（86）分别注入原料气体，从内部区域（84）和外侧区域（86）分别注入氧化剂气体。

公开(公告)号：US20080134976A1

公开(公告)日：2008-06-12

申请号：US12030054

申请日：2008-02-12

申请人： Hiroshi Shinriki ,  Kenji Matsumoto ,  Toru Tatsumi

发明人： Hiroshi Shinriki ,  Kenji Matsumoto ,  Toru Tatsumi

IPC分类号： C23C16/54

CPC分类号： H01L21/02271 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C30B25/14 ,  H01L21/02197 ,  H01L21/31691

摘要： A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate-side surface of the shower head.

摘要翻译： 具有多个用于将均匀密度的有机金属气体供给到基板表面的喷头，并且在MOCVD的反应炉中设置多个用于以均匀密度供给氧化气体的喷射孔 系统。 在淋浴头的基板侧表面附近设置有用于将内部加热到高于有机金属气体的热分解点但低于成膜温度的温度的加热器。

公开(公告)号：US06866882B1

公开(公告)日：2005-03-15

申请号：US09657627

申请日：2000-09-08

申请人： Hiroshi Shinriki ,  Kenji Matsumoto

发明人： Hiroshi Shinriki ,  Kenji Matsumoto

IPC分类号： H01L21/8247 ,  C23C16/02 ,  C23C16/40 ,  C23C16/448 ,  H01L21/00 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  B05D5/12

CPC分类号： H01L21/67017 ,  C23C16/409 ,  H01L21/31691

摘要： The vacuum degree in a reactor is set to as low as 0.1 Torr. In this state, a butyl acetate solution in which Pb(DPM)2 is dissolved at a concentration of 0.1 mol is transported from a Pb source generator to an evaporator, while the flow rate of the butyl acetate solution is controlled to a predetermined flow rate by a massflow controller, to evaporate the Pb(DPM)2 dissolved together with the butyl acetate by the evaporator. Helium gas is added to these at a flow rate of 250 sccm, and the mixed gas is transported to a shower head. With this operation, source gases are supplied to a wafer in the reactor, while the partial pressure of each source gas is set low.

摘要翻译： 反应器中的真空度设定为低至0.1托。 在该状态下，将Pb（DPM）2以0.1mol的浓度溶解的乙酸丁酯溶液从Pb源发生器输送到蒸发器，同时将乙酸丁酯溶液的流量控制在预定流量 通过质量流量控制器蒸发由蒸发器与乙酸丁酯溶解在一起的Pb（DPM）2。 以250sccm的流量向其中添加氦气，并将混合气体输送到淋浴头。 通过该操作，将源气体供给到反应器中的晶片，同时将各源气体的分压设定得较低。

公开(公告)号：US06482266B1

公开(公告)日：2002-11-19

申请号：US09598247

申请日：2000-06-21

申请人： Kenji Matsumoto ,  Hiroshi Shinriki

发明人： Kenji Matsumoto ,  Hiroshi Shinriki

IPC分类号： C23C1600

CPC分类号： C23C16/4481 ,  C23C16/409 ,  C23C16/4485 ,  C23C16/52

摘要： In a metal organic chemical vapor deposition method, a parameter convertible into the number of moles of gas of an organometallic source supplied from at least one source vessel is detected. A source contained in the source vessel is heated when the parameter becomes smaller than a minimum value necessary for forming a thin film of a metal constituting the organometallic source on a substrate in a reactor. The gas of the organometallic source is quantitatively supplied to the reactor, thereby forming the thin film on the substrate. A metal organic chemical vapor deposition apparatus is also disclosed.

摘要翻译： 在金属有机化学气相沉积方法中，检测可转换成从至少一个源容器供应的有机金属源的气体的摩尔数的参数。 当参数变得小于在反应器中在基板上形成构成有机金属源的金属的薄膜所需的最小值时，包含在源容器中的源被加热。 将有机金属源的气体定量供给反应器，从而在基板上形成薄膜。 还公开了一种金属有机化学气相沉积设备。

公开(公告)号：US08133555B2

公开(公告)日：2012-03-13

申请号：US12251343

申请日：2008-10-14

申请人： Hiroshi Shinriki ,  Kunitoshi Namba ,  Daekyun Jeong

发明人： Hiroshi Shinriki ,  Kunitoshi Namba ,  Daekyun Jeong

IPC分类号： H05H1/24 ,  C23C16/18

CPC分类号： C23C16/18 ,  C23C16/45531 ,  C23C16/45542

摘要： A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a β-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate.

摘要翻译： 通过等离子体ALD在衬底上形成单金属膜的方法包括：使基底表面与气相中的二 - 二酮金属络合物接触; 将分子附着的表面暴露于氮 - 氢混合等离子体; 并重复上述步骤，由此积聚原子层以在基底上形成单金属膜。

公开(公告)号：US20100092696A1

公开(公告)日：2010-04-15

申请号：US12251343

申请日：2008-10-14

申请人： Hiroshi Shinriki ,  Kunitoshi Namba ,  Daekyun Jeong

发明人： Hiroshi Shinriki ,  Kunitoshi Namba ,  Daekyun Jeong

IPC分类号： B05D3/14

CPC分类号： C23C16/18 ,  C23C16/45531 ,  C23C16/45542

摘要： A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a β-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate.

摘要翻译： 通过等离子体ALD在衬底上形成单金属膜的方法包括：使基底表面与气相中的二 - 二酮金属络合物接触; 将分子附着的表面暴露于氮 - 氢混合等离子体; 并重复上述步骤，由此积聚原子层以在基底上形成单金属膜。

公开(公告)号：US20100055433A1

公开(公告)日：2010-03-04

申请号：US12201434

申请日：2008-08-29

申请人： Hiroshi Shinriki ,  Kunitoshi Namba ,  Daekyun Jeong

发明人： Hiroshi Shinriki ,  Kunitoshi Namba ,  Daekyun Jeong

IPC分类号： B32B9/00 ,  B32B5/00

CPC分类号： C23C16/4554 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76846 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal film composed of multiple atomic layers continuously formed by atomic layer deposition of Ru and Ta or Ti includes at least a top section and a bottom section, wherein an atomic composition of Ru, Ta or Ti, and N varies in a thickness direction of the metal film. The atomic composition of Ru, Ta or Ti, and N in the top section is represented as Ru(x1)Ta/Ti(y1)N(z1) wherein an atomic ratio of Ru(x1)/(Ta/Ti(y1)) is no less than 15, and z1 is 0.05 or less. The atomic composition of Ru, Ta or Ti, and N in the bottom section is represented as Ru(x2)Ta/Ti(y2)N(z2) wherein an atomic ratio of Ru(x2)/(Ta/Ti(y2)) is more than zero but less than 15, and z2 is 0.10 or greater.

摘要翻译： 由Ru和Ta或Ti的原子层沉积连续形成的多个原子层构成的金属膜至少包括顶部和底部，其中Ru，Ta或Ti和N的原子组成在厚度方向上变化 金属膜。 Ru（x1）/（Ta / Ti（y1））的原子比为Ru（x1）Ta / Ti（y1）N（z1）表示上部的Ru，Ta或Ti的原子组成， ）不小于15，z1为0.05以下。 Ru（x2）/（Ta / Ti（y2））的原子比为Ru（x2）Ta / Ti（y2）N（z2）表示底部的Ru，Ta或Ti和N的原子组成， ）大于零但小于15，z2为0.10或更大。

公开(公告)号：US20090087339A1

公开(公告)日：2009-04-02

申请号：US12203405

申请日：2008-09-03

申请人： Hiroshi Shinriki

发明人： Hiroshi Shinriki

IPC分类号： B32B15/00 ,  C23C16/00

CPC分类号： C23C16/18 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

摘要： A method for depositing a thin ruthenium (Ru) film on a substrate in a reaction chamber, comprising: step (i) of supplying at least one type of gas of a ruthenium precursor being a β-diketone-coordinated ruthenium complex and causing the gas to be adsorbed to the substrate in the reaction chamber; step (ii) of supplying a reducing gas into the reaction chamber and exciting the reducing gas, or supplying an excited reducing gas into the reaction chamber, in order to activate the ruthenium precursor adsorbed to the substrate; and step (iii) of repeating steps (i) and (ii) to form a thin ruthenium film on the substrate.

摘要翻译： 一种用于在反应室中的衬底上沉积薄钌（Ru）膜的方法，包括：（i）提供至少一种类型的钌前体气体，其为β-二酮配位的钌络合物，并使气体 被吸附到反应室中的基底上; 步骤（ii）将还原气体供应到反应室中并激发还原气体，或将激发的还原气体供应到反应室中，以激活吸附到基底上的钌前体; 和重复步骤（i）和（ii）的步骤（iii）以在基材上形成薄的钌膜。

公开(公告)号：US07497964B2

公开(公告)日：2009-03-03

申请号：US11432332

申请日：2006-05-12

申请人： Masanobu Igeta ,  Kazuyoshi Yamazaki ,  Shintaro Aoyama ,  Hiroshi Shinriki

发明人： Masanobu Igeta ,  Kazuyoshi Yamazaki ,  Shintaro Aoyama ,  Hiroshi Shinriki

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01J37/32009 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31662

摘要： A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container 21, and ultraviolet light is irradiated to the gas while gas inside the processing container 21 is being discharged. After that, a remote plasma source 26 is driven to ignite plasma.

摘要翻译： 一种解决在没有被内部保持抽吸到真空中的处理容器的重新启动操作中等离子体不会点燃的问题的方法。 含有氧的气体通过处理容器21，在排出处理容器21内的气体的同时照射气体。 之后，驱动远程等离子体源26以点燃等离子体。