发明授权
- 专利标题: Metal-insulator-metal capacitor structure
- 专利标题(中): 金属 - 绝缘体 - 金属电容器结构
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申请号: US10678236申请日: 2003-10-03
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公开(公告)号: US06934143B2公开(公告)日: 2005-08-23
- 发明人: You-Hua Chou , Yen-Shuo Su , Yen-Chang Chao , Jain-Shing Tsai , Yong-Ping Chan , Jung-Chen Yang
- 申请人: You-Hua Chou , Yen-Shuo Su , Yen-Chang Chao , Jain-Shing Tsai , Yong-Ping Chan , Jung-Chen Yang
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW
- 代理机构: Duane Morris LLP
- 主分类号: H01G4/005
- IPC分类号: H01G4/005 ; H01G4/06 ; H01G4/228 ; H01G4/232 ; H01G4/30 ; H01G4/33 ; H01G4/38 ; H01L21/02 ; H01L23/522
摘要:
A capacitor having an electrically/conductive plate, an electrically conductive segmented electrically conductive plate segments and a second plurality of electrically conductive plate segments, a first capacitor dielectric disposed between the plate and the segment plate, at least one electrically conductive interconnect coupling each of the plate segment of one of the first and second plurality of plate segments to the plate, and a second capacitor dieletric disposed between the plate segments.
公开/授权文献
- US20050073800A1 Metal-insulator-metal capacitor structure 公开/授权日:2005-04-07