公开(公告)号：US06934143B2

公开(公告)日：2005-08-23

申请号：US10678236

申请日：2003-10-03

申请人： You-Hua Chou ,  Yen-Shuo Su ,  Yen-Chang Chao ,  Jain-Shing Tsai ,  Yong-Ping Chan ,  Jung-Chen Yang

发明人： You-Hua Chou ,  Yen-Shuo Su ,  Yen-Chang Chao ,  Jain-Shing Tsai ,  Yong-Ping Chan ,  Jung-Chen Yang

IPC分类号： H01G4/005 ,  H01G4/06 ,  H01G4/228 ,  H01G4/232 ,  H01G4/30 ,  H01G4/33 ,  H01G4/38 ,  H01L21/02 ,  H01L23/522

CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G4/232 ,  H01G4/30 ,  H01G4/38 ,  H01L23/5223 ,  H01L28/82 ,  H01L2924/0002 ,  Y10T29/435 ,  H01L2924/00

摘要： A capacitor having an electrically/conductive plate, an electrically conductive segmented electrically conductive plate segments and a second plurality of electrically conductive plate segments, a first capacitor dielectric disposed between the plate and the segment plate, at least one electrically conductive interconnect coupling each of the plate segment of one of the first and second plurality of plate segments to the plate, and a second capacitor dieletric disposed between the plate segments.

摘要翻译： 具有电/导电板的电容器，导电分段的导电板段和第二多个导电板段，设置在板和段板之间的第一电容器电介质，至少一个导电互连， 所述第一和第二多个板段中的一个的板段到所述板，以及设置在所述板段之间的第二电容器。

公开(公告)号：US20050073800A1

公开(公告)日：2005-04-07

申请号：US10678236

申请日：2003-10-03

申请人： You-Hua Chou ,  Yen-Shuo Su ,  Yen-Chang Chao ,  Jain-Shing Tsai ,  Yong-Ping Chan ,  Jung-Chen Yang

发明人： You-Hua Chou ,  Yen-Shuo Su ,  Yen-Chang Chao ,  Jain-Shing Tsai ,  Yong-Ping Chan ,  Jung-Chen Yang

IPC分类号： H01G4/005 ,  H01G4/06 ,  H01G4/228 ,  H01G4/232 ,  H01G4/30 ,  H01G4/33 ,  H01G4/38 ,  H01L21/02 ,  H01L23/522

CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G4/232 ,  H01G4/30 ,  H01G4/38 ,  H01L23/5223 ,  H01L28/82 ,  H01L2924/0002 ,  Y10T29/435 ,  H01L2924/00

摘要： A capacitor having an electrically/conductive plate, an electrically conductive segmented plate defining a first plurality of electrically conductive plate segments and a second plurality of electrically conductive plate segments, a first capacitor dielectric disposed between the plate and the segmented plate, at least one electrically conductive interconnect coupling each of the plate segments of one of the first and second plurality of plate segments to the plate, and a second capacitor dielectric disposed between the plate segments.

摘要翻译： 具有电/导电板的电容器，限定第一多个导电板段和第二多个导电板段的导电分段板，设置在板和分段板之间的第一电容器电介质，至少一个电 所述导电互连将所述第一和第二多个板段中的一个的每个板段耦合到所述板，以及设置在所述板段之间的第二电容器电介质。

公开(公告)号：US20060063347A1

公开(公告)日：2006-03-23

申请号：US10944844

申请日：2004-09-21

申请人： Yen-Chang Chao ,  You-Hua Chou ,  Yong-Ping Chan

发明人： Yen-Chang Chao ,  You-Hua Chou ,  Yong-Ping Chan

IPC分类号： H01L21/76

CPC分类号： H01L22/20 ,  H01L22/34 ,  H01L2223/54453

摘要： A method of testing a test wafer includes shielding test centers on a test wafer using shielding tabs during the deposition of a layer. The test wafer has the same size and shape of product wafers. The shielding tabs are then removed from the test wafer. A plurality of predetermined points which are separated from each test center by a critical interval are checked, and whether each point is covered by the layer is determined through an interferometer or a microprobe. The test wafer is processed after adjustments to or maintenance on equipment, or after a fixed number of product wafers have been processed.

摘要翻译： 测试测试晶片的方法包括在沉积层期间使用屏蔽片在测试晶片上屏蔽测试中心。 测试晶片具有相同的尺寸和形状的产品晶片。 然后将屏蔽突片从测试晶片上移除。 检查从每个测试中心分离临界间隔的多个预定点，并且通过干涉仪或微探针确定每个点是否被层覆盖。 测试晶片在对设备进行调整或维护后，或在固定数量的产品晶片进行处理后进行处理。

公开(公告)号：US07169626B2

公开(公告)日：2007-01-30

申请号：US10944844

申请日：2004-09-21

申请人： Yen-Chang Chao ,  You-Hua Chou ,  Yong-Ping Chan

发明人： Yen-Chang Chao ,  You-Hua Chou ,  Yong-Ping Chan

IPC分类号： H01L31/26

CPC分类号： H01L22/20 ,  H01L22/34 ,  H01L2223/54453

摘要： A method of testing a test wafer includes shielding test centers on a test wafer using shielding tabs during the deposition of a layer. The test wafer has the same size and shape of product wafers. The shielding tabs are then removed from the test wafer. A plurality of predetermined points which are separated from each test center by a critical interval are checked, and whether each point is covered by the layer is determined through an interferometer or a microprobe. The test wafer is processed after adjustments to or maintenance on equipment, or after a fixed number of product wafers have been processed.

摘要翻译： 测试测试晶片的方法包括在沉积层期间使用屏蔽片在测试晶片上屏蔽测试中心。 测试晶片具有相同的尺寸和形状的产品晶片。 然后将屏蔽突片从测试晶片上移除。 检查从每个测试中心分离临界间隔的多个预定点，并且通过干涉仪或微探针确定每个点是否被层覆盖。 测试晶片在对设备进行调整或维护后，或在固定数量的产品晶片进行处理后进行处理。

公开(公告)号：US09982340B2

公开(公告)日：2018-05-29

申请号：US13439127

申请日：2012-04-04

申请人： Chih-Tsung Lee ,  Hung Jui Chang ,  You-Hua Chou ,  Shiu-Ko Jangjian ,  Chung-En Kao ,  Ming-Chin Tsai ,  Huan-Wen Lai

发明人： Chih-Tsung Lee ,  Hung Jui Chang ,  You-Hua Chou ,  Shiu-Ko Jangjian ,  Chung-En Kao ,  Ming-Chin Tsai ,  Huan-Wen Lai

IPC分类号： C23C16/44 ,  C23C16/30 ,  C23C16/509 ,  H01J37/32

CPC分类号： C23C16/4412 ,  C23C16/308 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244

摘要： An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

公开(公告)号：US09093252B2

公开(公告)日：2015-07-28

申请号：US13397957

申请日：2012-02-16

申请人： Bo-Hung Lin ,  Ming-Chih Tsai ,  You-Hua Chou ,  Chung-En Kao

发明人： Bo-Hung Lin ,  Ming-Chih Tsai ,  You-Hua Chou ,  Chung-En Kao

IPC分类号： C23C14/35 ,  H01J37/34 ,  H01J37/32

CPC分类号： C23C14/351 ,  C23C14/35 ,  H01J37/32669 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461

摘要： In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

摘要翻译： 在一些实施例中，本公开涉及等离子体处理系统，其包括被配置为通过振动和旋转运动的组合提供对称磁轨的磁控管。 所公开的磁控管包括被配置为产生磁场的磁性元件。 磁性元件附接到连接在磁性元件和旋转轴之间的弹性元件，该旋转轴构造成围绕溅射靶的中心旋转磁性元件。 弹性元件构造成在磁性元件的旋转期间改变其长度以改变旋转轴和磁性元件之间的径向距离。 由此产生的磁道能够使磁性元件在角度方向和径向方向上同时运动。 这样的运动能够提供良好的晶片均匀性和较短的沉积时间的对称磁迹。

公开(公告)号：US08953298B2

公开(公告)日：2015-02-10

申请号：US13307089

申请日：2011-11-30

申请人： Chung-En Kao ,  You-Hua Chou ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

发明人： Chung-En Kao ,  You-Hua Chou ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

IPC分类号： H01L21/683 ,  H01T23/00

CPC分类号： H01L21/6831 ,  H01L21/67742

摘要： A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.

摘要翻译： 工件传送系统具有多个具有轴承和初级和次级变压器线圈的接头，其中提供给每个接头的初级变压器线圈和次级变压器线圈的功率在相应接头的主变压器线圈和次级变压器线圈之间产生互感。 第一对臂通过第一对接头可旋转地联接到叶片，其中第一对接头中的每一个的主变压器线圈可操作地耦合到第一对臂，并且每个臂的次级变压器线圈 第一对接头可操作地联接到叶片和位于叶片的介电工件保持表面下方的电极。 电极通过接头的变压器线圈非接触地通电，并且刀片可以通过反向电流方向和电压调节来夹紧和去夹紧工件。

公开(公告)号：US08692299B2

公开(公告)日：2014-04-08

申请号：US13594254

申请日：2012-08-24

申请人： Min Hao Hong ,  You-Hua Chou ,  Chih-Tsung Lee ,  Shiu-Ko JangJian ,  Miao-Cheng Liao ,  Hsiang Hsiang Ko ,  Chen-Ming Huang

发明人： Min Hao Hong ,  You-Hua Chou ,  Chih-Tsung Lee ,  Shiu-Ko JangJian ,  Miao-Cheng Liao ,  Hsiang Hsiang Ko ,  Chen-Ming Huang

IPC分类号： H01L27/085

CPC分类号： H01L21/76224 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/0334 ,  H01L21/31053 ,  H01L21/762 ,  H01L21/76232 ,  H01L21/823412 ,  H01L21/823481 ,  H01L29/0653 ,  H01L29/66477 ,  H01L29/66651 ,  H01L29/78

摘要： An integrated circuit device and a process for making the integrated circuit device. The integrated circuit device including a substrate having a trench formed therein, a first layer of isolation material occupying the trench, a second layer of isolation material formed over the first layer of isolation material, an epitaxially-grown silicon layer on the substrate and horizontally adjacent the second layer of isolation material, and a gate structure formed on the epitaxially-grown silicon, the gate structure defining a channel.

摘要翻译： 集成电路器件和用于制造集成电路器件的工艺。 集成电路器件包括其中形成有沟槽的衬底，占据沟槽的隔离材料的第一层，在第一隔离材料层上形成的隔离材料的第二层，衬底上的外延生长的硅层，并且水平相邻 第二层隔离材料，以及形成在外延生长的硅上的栅极结构，栅极结构限定沟道。

公开(公告)号：US20130201596A1

公开(公告)日：2013-08-08

申请号：US13364463

申请日：2012-02-02

申请人： Chia-Ho Chen ,  Ming Huei Lien ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

发明人： Chia-Ho Chen ,  Ming Huei Lien ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H01L21/6831 ,  H02N13/00

摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.

摘要翻译： 用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。 电介质层具有由不同介电材料形成的场和一个或多个区域。 一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。 诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。 在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

公开(公告)号：US20130186338A1

公开(公告)日：2013-07-25

申请号：US13355770

申请日：2012-01-23

申请人： Ming-Chin Tsai ,  Bo-Hung Lin ,  You-Hua Chou ,  Chung-En Kao

发明人： Ming-Chin Tsai ,  Bo-Hung Lin ,  You-Hua Chou ,  Chung-En Kao

IPC分类号： C23C16/46 ,  F27D11/12

CPC分类号： H01L21/324 ,  C23C14/50 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/67115 ,  H01L21/76838

摘要： The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

摘要翻译： 本公开涉及被配置为加热半导体衬底或晶片的物理气相沉积系统。 在一些实施例中，所公开的物理气相沉积系统包括至少一个热源，其具有用于加热基底的一个或多个灯模块。 灯模块可以通过屏蔽装置与衬底分离。 在一些实施例中，屏蔽装置包括一件式装置或两件式装置。 所公开的物理气相沉积系统可以加热半导体衬底，回流沉积在其上的金属膜，而不需要单独的室，从而减少处理时间，需要较少的热量预算和减少衬底损伤。