Method for detecting alignment mark shielding
    1.
    发明申请
    Method for detecting alignment mark shielding 有权
    检测对准标记屏蔽的方法

    公开(公告)号:US20060063347A1

    公开(公告)日:2006-03-23

    申请号:US10944844

    申请日:2004-09-21

    IPC分类号: H01L21/76

    摘要: A method of testing a test wafer includes shielding test centers on a test wafer using shielding tabs during the deposition of a layer. The test wafer has the same size and shape of product wafers. The shielding tabs are then removed from the test wafer. A plurality of predetermined points which are separated from each test center by a critical interval are checked, and whether each point is covered by the layer is determined through an interferometer or a microprobe. The test wafer is processed after adjustments to or maintenance on equipment, or after a fixed number of product wafers have been processed.

    摘要翻译: 测试测试晶片的方法包括在沉积层期间使用屏蔽片在测试晶片上屏蔽测试中心。 测试晶片具有相同的尺寸和形状的产品晶片。 然后将屏蔽突片从测试晶片上移除。 检查从每个测试中心分离临界间隔的多个预定点,并且通过干涉仪或微探针确定每个点是否被层覆盖。 测试晶片在对设备进行调整或维护后,或在固定数量的产品晶片进行处理后进行处理。

    Method for detecting alignment mark shielding
    2.
    发明授权
    Method for detecting alignment mark shielding 有权
    检测对准标记屏蔽的方法

    公开(公告)号:US07169626B2

    公开(公告)日:2007-01-30

    申请号:US10944844

    申请日:2004-09-21

    IPC分类号: H01L31/26

    摘要: A method of testing a test wafer includes shielding test centers on a test wafer using shielding tabs during the deposition of a layer. The test wafer has the same size and shape of product wafers. The shielding tabs are then removed from the test wafer. A plurality of predetermined points which are separated from each test center by a critical interval are checked, and whether each point is covered by the layer is determined through an interferometer or a microprobe. The test wafer is processed after adjustments to or maintenance on equipment, or after a fixed number of product wafers have been processed.

    摘要翻译: 测试测试晶片的方法包括在沉积层期间使用屏蔽片在测试晶片上屏蔽测试中心。 测试晶片具有相同的尺寸和形状的产品晶片。 然后将屏蔽突片从测试晶片上移除。 检查从每个测试中心分离临界间隔的多个预定点,并且通过干涉仪或微探针确定每个点是否被层覆盖。 测试晶片在对设备进行调整或维护后,或在固定数量的产品晶片进行处理后进行处理。