发明授权
- 专利标题: Plasma processing apparatus and plasma processing method
- 专利标题(中): 等离子体处理装置和等离子体处理方法
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申请号: US10589272申请日: 2005-02-15
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公开(公告)号: US08267040B2公开(公告)日: 2012-09-18
- 发明人: Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Zhong Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
- 申请人: Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Zhong Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2004-037851 20040216
- 国际申请: PCT/JP2005/002217 WO 20050215
- 国际公布: WO2005/078782 WO 20050825
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23F1/00 ; H01L21/306
摘要:
In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.
公开/授权文献
- US20070264441A1 Plasma Processing Apparatus and Plasma Processing Method 公开/授权日:2007-11-15
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