公开(公告)号：US08968512B2

公开(公告)日：2015-03-03

申请号：US12737310

申请日：2009-06-30

申请人： Shinya Nishimoto

发明人： Shinya Nishimoto

IPC分类号： C23C16/511 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H01J37/32 ,  C23C16/06 ,  C23C16/44

CPC分类号： H01L21/67109 ,  H01J37/32192 ,  H01J37/32522 ,  H01J37/32724

摘要： Provided is a temperature adjusting mechanism, which can keep deviation of a temperature of a portion in contact with the temperature adjusting mechanism to be small by controlling the temperature accurately at a high speed. A semiconductor manufacturing apparatus using such temperature adjusting mechanism is also provided. A cooling jacket (6) is provided with a cooling channel (61), and a heat lane (62). The heat lane (62) is provided with a heat receiving section (63), and a heat dissipating section (64), and seals a two-phase condensable working fluid (hereinafter referred to as the working liquid) in an annular narrow tube alternately folds back and forth therebetween. The heat dissipating section (64) is a portion to be cooled by the cooling channel (61), and the heat receiving section (63) is a portion having a temperature higher than that of the heat dissipating section (64). In the heat receiving section (63), heat is received, the working liquid is self-excited by nucleate boiling, and the working liquid transfers sensible heat while being circulated. Furthermore, in the heat receiving section (63), a liquid phase absorbs heat and the phase is transformed into a vapor phase, and in the heat dissipating section (64), a vapor phase dissipates heat and is cooled and condensed, the phase is transformed into a liquid phase, and latent heat is transferred by vapor-liquid phase transformation. Heat is transferred between the heat receiving section (63) and the heat dissipating section (64), and the temperature is uniformized in a short time.

摘要翻译： 提供一种温度调节机构，通过以高速准确地控制温度，可以使与温度调节机构接触的部分的温度偏差小。 还提供了使用这种温度调节机构的半导体制造装置。 冷却套（6）设有冷却通道（61）和加热通道（62）。 热通道62设置有受热部63和散热部64，并将两相可冷凝的工作流体（以下称为工作液）交替地环绕在环状的窄管中 在它们之间来回折叠。 散热部（64）是由冷却通道（61）冷却的部分，受热部（63）是具有比散热部（64）的温度高的部分。 在受热部（63）中，接收热量，工作液体通过核沸腾自激，工作液体在传送期间转移显热。 此外，在受热部（63）中，液相吸收热量，相变成气相，在散热部（64）中，蒸气相散热并冷凝冷凝 转化成液相，通过气 - 液相变转移潜热。 热量在热接收部分（63）和散热部分（64）之间转移，温度在短时间内被均匀化。

公开(公告)号：US20130180660A1

公开(公告)日：2013-07-18

申请号：US13818720

申请日：2011-08-24

申请人： Toshihisa Nozawa ,  Takahiro Senda ,  Shinya Nishimoto ,  Munetaka Yamagami ,  Kazuki Moyama

发明人： Toshihisa Nozawa ,  Takahiro Senda ,  Shinya Nishimoto ,  Munetaka Yamagami ,  Kazuki Moyama

IPC分类号： G01N21/55

CPC分类号： G01N21/55 ,  H01J37/32192 ,  H01J37/32972 ,  H01L21/31116 ,  H01L22/12 ,  H01L22/26 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： [Problem] To carry out high accuracy optical monitoring of the surface of a substrate to be treated inside a treatment vessel using non-coherent monitor light having a wide wavelength range, without affecting the uniformity of the electromagnetic radiation from a planar slot antenna.[Solution] The optical monitor device 100 of the present microwave plasma etching device has: a monitor head 102 located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor 12, more radially outward than a coaxial pipe 66, and above a cover plate 72; an optical waveguide 104 for monitoring provided vertically below the monitor head 102, and longitudinally traversing the cooling plate 72, a dielectric plate 54, and a dielectric window 52; and a monitor main body optically connected to the monitor head 102 via an optical fiber 106.

摘要翻译： [问题]使用具有宽波长范围的非相干监视光，在处理容器内进行待处理基板的表面的高精度光学监视，而不影响来自平面缝隙天线的电磁辐射的均匀性。 本解决方案本微波等离子体蚀刻装置的光学监测装置100具有：监视器头102，其位于比安装在基座12上的半导体晶片W的边缘更径向向内的位置，比同轴管66更径向向外 和盖板72上方; 用于监控的光波导104，其垂直地设置在监视器头102的下方，并纵向穿过冷却板72，电介质板54和电介质窗口52; 以及经由光纤106与监视器头102光学连接的监视器主体。

公开(公告)号：US08242405B2

公开(公告)日：2012-08-14

申请号：US13054014

申请日：2009-06-24

申请人： Shinya Nishimoto

发明人： Shinya Nishimoto

IPC分类号： B23K10/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32522

摘要： A microwave plasma processing apparatus has a microwave antenna in which a wavelength-shortening plate and a cooling portion of a cooling jacket are arranged adjacent to each other.

摘要翻译： 微波等离子体处理装置具有波长缩短板和冷却套的冷却部彼此相邻配置的微波天线。

公开(公告)号：US20110011341A1

公开(公告)日：2011-01-20

申请号：US12736261

申请日：2009-03-06

申请人： Shinya Nishimoto

发明人： Shinya Nishimoto

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/511

摘要： A shower plate (300) comprises a first flat plate (301), a second flat plate (302) and a third flat plate (303). Flow passages (303a) through which a heat medium flows are formed in the surface of the third flat plate (303) that faces the second flat plate (302). A lattice in which grids cross each other at approximately 90° is formed in the center area of the third flat plate (303), and the flow passages (303a) are bent at approximately 90° that is equal to the angle at which the grids cross each other. By bending the flow passages (303a) in such a manner, a large number of flow passages (303a) can be provided in particularly the center area heated to a high temperature, thereby satisfactorily cooling the shower plate.

摘要翻译： 淋浴板（300）包括第一平板（301），第二平板（302）和第三平板（303）。 在与第二平板（302）相对的第三平板（303）的表面形成有热介质流过的流路（303a）。 在第三平板（303）的中心区域形成格栅大约90°相互交叉的格子，并且流动通道（303a）以大约90°弯曲，该角度等于格栅 互相交叉 通过以这种方式弯曲流动通道（303a），特别是可以在加热到高温的中心区域中设置大量的流动通道（303a），从而令喷淋板满意地冷却。

公开(公告)号：US20090317566A1

公开(公告)日：2009-12-24

申请号：US12487164

申请日：2009-06-18

申请人： Shinya NISHIMOTO

发明人： Shinya NISHIMOTO

IPC分类号： C23C16/511 ,  H05H1/46

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/3222

摘要： A microwave plasma processing apparatus performs plasma processing on a substrate by exciting a gas by electric field energy of microwaves emitted from a radial line slot antenna (RLSA). The microwave plasma processing apparatus includes: a processing container in which plasma processing is performed; a microwave source outputting microwaves; a rectangular waveguide transmitting the microwaves outputted from the microwave source; a coaxial converter converting a mode of the microwaves transmitted to the rectangular waveguide; an inner conductor of a coaxial waveguide connected to the coaxial converter to be slidable; a first contact member joined with the coaxial converter and electrically connecting the coaxial converter and the inner conductor; and a first spring member absorbing displacement, due to thermal expansion, of the RLSA and a member disposed above the RLSA.

摘要翻译： 微波等离子体处理装置通过从径向线槽天线（RLSA）发射的微波的电场能激发气体，对基板进行等离子体处理。 微波等离子体处理装置包括：进行等离子体处理的处理容器; 输出微波的微波源; 发送从微波源输出的微波的矩形波导; 转换发送到矩形波导的微波的模式的同轴转换器; 连接到同轴转换器的同轴波导的内导体可滑动; 与所述同轴转换器连接并电连接所述同轴转换器和所述内部导体的第一接触构件; 以及第一弹簧构件，其由于热膨胀而吸收RLSA和设置在RLSA上方的构件的位移。

公开(公告)号：US20090314629A1

公开(公告)日：2009-12-24

申请号：US12487199

申请日：2009-06-18

申请人： Shinya NISHIMOTO

发明人： Shinya NISHIMOTO

IPC分类号： H05H1/24 ,  B01J19/08

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222

摘要： A transmission path of microwaves even after a temperature increases, is maintained in an appropriate state. A microwave plasma processing apparatus performs plasma processing on a substrate by exciting gas due to the electric field energy of microwaves emitted from a slot plate of a radial line slot antenna (RLSA). The microwave plasma processing apparatus includes: a processing container in which plasma processing is performed; a microwave source outputting microwaves; a rectangular waveguide transmitting the microwaves outputted from the microwave source; a coaxial converter converting a mode of the microwaves transmitted to the rectangular waveguide; a coaxial waveguide transmitting the microwaves of which the mode is converted by the coaxial converter; a taper-shaped connector attached to an inner conductor of the coaxial waveguide without contacting the slot plate; and an elastic body electrically connecting the taper-shaped connector and the slot plate.

摘要翻译： 即使在温度升高之后，微波的传输路径保持在适当的状态。 微波等离子体处理装置通过从径向线槽天线（RLSA）的槽板发射的微波的电场能激发气体，对衬底进行等离子体处理。 微波等离子体处理装置包括：进行等离子体处理的处理容器; 输出微波的微波源; 发送从微波源输出的微波的矩形波导; 转换发送到矩形波导的微波的模式的同轴转换器; 传输由同轴转换器转换模式的微波的同轴波导; 连接到同轴波导的内导体而不接触槽板的锥形连接器; 以及电连接锥形连接器和槽板的弹性体。

公开(公告)号：US20070264441A1

公开(公告)日：2007-11-15

申请号：US10589272

申请日：2005-02-15

申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

IPC分类号： C08F2/46 ,  C23C16/00

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.

摘要翻译： 通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。 在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与 透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。 在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。

公开(公告)号：US20070102287A1

公开(公告)日：2007-05-10

申请号：US11620289

申请日：2007-01-05

申请人： Shinya Nishimoto ,  Kouji Mitsuhashi ,  Hidehito Saigusa ,  Taira Takase ,  Hiroyuki Nakayama

发明人： Shinya Nishimoto ,  Kouji Mitsuhashi ,  Hidehito Saigusa ,  Taira Takase ,  Hiroyuki Nakayama

IPC分类号： C23C14/00

CPC分类号： H01L21/67069 ,  H01J37/32458 ,  H01J37/32495 ,  H01J37/32972

摘要： The present invention presents an improved optical window deposition shield an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.

摘要翻译： 本发明提出了一种改进的光学窗口沉积屏蔽，用于通过沉积屏蔽对光学访问等离子体处理系统中的处理空间的改进的光学窗口沉积屏蔽，其中光学窗口沉积屏蔽的设计和制造有利地提供光学干净的访问 涉及在处理空间中处理等离子体，同时维持基本上最小的光学窗口沉积屏蔽的侵蚀。

公开(公告)号：US07163585B2

公开(公告)日：2007-01-16

申请号：US10803994

申请日：2004-03-19

申请人： Shinya Nishimoto ,  Kouji Mitsuhashi ,  Hidehito Saigusa ,  Taira Takase ,  Hiroyuki Nakayama

发明人： Shinya Nishimoto ,  Kouji Mitsuhashi ,  Hidehito Saigusa ,  Taira Takase ,  Hiroyuki Nakayama

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67069 ,  H01J37/32458 ,  H01J37/32495 ,  H01J37/32972

摘要： The present invention presents an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.

摘要翻译： 本发明提出了一种改进的光学窗口沉积屏蔽，用于通过沉积屏蔽件对等离子体处理系统中的处理空间进行光学访问，其中光学窗口沉积屏蔽的设计和制造有利地提供光学干净地访问处理等离子体 同时维持光学窗口沉积屏蔽的基本上最小的侵蚀。

公开(公告)号：US20050207088A1

公开(公告)日：2005-09-22

申请号：US11001298

申请日：2004-12-02

申请人： Shinya Nishimoto ,  Hiroyuki Nakayama ,  Hidetoshi Kimura

发明人： Shinya Nishimoto ,  Hiroyuki Nakayama ,  Hidetoshi Kimura

IPC分类号： H01L21/68 ,  B23Q3/15 ,  H01L21/00 ,  H01L21/683 ,  H02H1/00

CPC分类号： H01L21/67109 ,  H01L21/6831

摘要： An electrostatic chuck for attracting and holding a substrate by using an electrostatic force includes a plurality of protrusion portions to be brought into contact with the substrate. The protrusion portions are formed of a ceramic dielectric including grains each having a specified particle diameter, and contact surfaces of the protrusion portions with the substrate are formed to have a surface roughness depending on the particle diameter.

摘要翻译： 用于通过使用静电力吸引和保持基板的静电卡盘包括与基板接触的多个突出部分。 突出部由陶瓷电介质形成，该陶瓷电介质包括各自具有特定粒径的晶粒，并且突出部与基板的接触表面形成为具有取决于粒径的表面粗糙度。