公开(公告)号：US08267040B2

公开(公告)日：2012-09-18

申请号：US10589272

申请日：2005-02-15

申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Zhong Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Zhong Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.

摘要翻译： 在通过供给微波产生的等离子体处理处理容器中的晶片的等离子体处理装置中，透光窗口在其下表面的中心区域具有由与材料相同的材料制成的悬挂部分 透光窗。 在悬挂部的外周面与从支撑部延续的侧壁内表面之间形成有间隙，间隙长度为0.5〜10mm，更优选为0.5〜5mm。 在接触点处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片的量也减少。

公开(公告)号：US20070264441A1

公开(公告)日：2007-11-15

申请号：US10589272

申请日：2005-02-15

申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

IPC分类号： C08F2/46 ,  C23C16/00

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.

摘要翻译： 通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。 在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与 透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。 在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。

公开(公告)号：US20100032094A1

公开(公告)日：2010-02-11

申请号：US12441429

申请日：2008-08-20

申请人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： H01L21/306 ,  C23C16/54

CPC分类号： H01L21/461 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46 ,  Y10T428/24273

摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.

摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶棚板允许从天花板板设置的平面天线构件的槽口发射的微波通过顶板进入处理室，并且包括在天花板的表面上以放射状图案设置的多个突起部分， 表面朝向处理室的内部。

公开(公告)号：US08343308B2

公开(公告)日：2013-01-01

申请号：US12441429

申请日：2008-08-20

申请人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/461 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46 ,  Y10T428/24273

摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.

摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶板允许从天花板板一侧设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形设置的多个凹部， 面向处理室的内部。

公开(公告)号：US20090194238A1

公开(公告)日：2009-08-06

申请号：US12361066

申请日：2009-01-28

申请人： Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Shinji Komoto

发明人： Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Shinji Komoto

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01L21/68728 ,  H01L21/68735

摘要： Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus 5 processes a substrate W in a processing vessel 20 by converting a processing gas, which is supplied into the processing vessel 20, into plasma, wherein a mounting table 21 for mounting the substrate W on a top surface thereof is installed in the processing vessel 20, and positioning pins 25 for positioning a peripheral portion of the substrate W are installed to be protruded in plural locations on the top surface of the mounting table 21, and the positioning pins 25 are inserted into recess portions 26 formed in the top surface of the mounting table 21.

摘要翻译： 提供一种等离子体处理装置，其能够容易地将安装台的顶面加工成具有平滑的形状，并且还能够防止基板的周边部分的温度下降。 等离子体处理装置5通过将供给到处理容器20的处理气体转换成等离子体来处理处理容器20中的基板W，其中，安装基板W的顶面的安装台21安装在 处理容器20和用于定位基板W的周边部分的定位销25安装成在安装台21的上表面上的多个位置突出，并且定位销25插入形成在安装台21的凹部26中。 安装台21的顶面。

公开(公告)号：US08387560B2

公开(公告)日：2013-03-05

申请号：US11632779

申请日：2005-07-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于朝向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

公开(公告)号：US20080035058A1

公开(公告)日：2008-02-14

申请号：US11632779

申请日：2005-07-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

IPC分类号： H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

公开(公告)号：US20080190560A1

公开(公告)日：2008-08-14

申请号：US11885625

申请日：2006-02-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Nobuhiko Yamamoto

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Nobuhiko Yamamoto

IPC分类号： H01L21/3065 ,  C23C16/453

CPC分类号： H01L21/67069 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

摘要： The present invention is a microwave plasma processing apparatus comprising: a chamber in which an object to be processed is housed; a process gas supply unit that supplies a process gas into the chamber; a microwave generating source that generates a microwave for forming a plasma due to the process gas in the chamber; a waveguide unit that guides the microwave generated by the microwave generating source toward the chamber; a planar antenna made of a conductive material provided with a plurality of microwave radiating holes for radiating the microwave guided by the waveguide unit toward the chamber; a microwave transmitting plate made of a dielectric material, the microwave transmitting plate serving as a top wall of the chamber and transmitting the microwave that has passed through the microwave radiating holes of the planar antenna; and a slow-wave plate disposed on an opposite side of the planar antenna relative to the microwave transmitting plate, the slow-wave plate having a function of shortening a wavelength of the microwave that reaches the planar antenna. The planar antenna and the microwave transmitting plate are in contact with each other, with substantially no air therebetween, the slow-wave plate and the microwave transmitting plate are made of the same material, and an equivalent circuit formed by the slow-wave plate, the planar antenna, the microwave transmitting plate, and the plasma due to the process gas formed in the chamber satisfies a resonance condition.

摘要翻译： 本发明是微波等离子体处理装置，其特征在于，包括：容纳被加工物的室; 处理气体供应单元，其将处理气体供应到所述室中; 微波发生源，其产生由于所述室中的处理气体而形成等离子体的微波; 波导单元，其将由微波发生源产生的微波引导到所述室; 由导电材料制成的平面天线，设置有用于将由波导单元引导的微波辐射到腔室的多个微波辐射孔; 由电介质材料制成的微波透射板，所述微波透射板用作所述室的顶壁，并且透过已经穿过所述平面天线的微波辐射孔的微波; 以及相对于微波透射板设置在平面天线的相反侧的慢波板，该慢波板具有缩短到达平面天线的微波的波长的功能。 平面天线和微波透射板彼此接触，基本上没有空气，慢波板和微波透射板由相同的材料制成，并且由慢波板形成的等效电路， 由于在室内形成的工艺气体，平面天线，微波透射板和等离子体满足谐振条件。

公开(公告)号：US20050188922A1

公开(公告)日：2005-09-01

申请号：US11064012

申请日：2005-02-24

申请人： Kiyotaka Ishibashi ,  Cai zhong Tian

发明人： Kiyotaka Ishibashi ,  Cai zhong Tian

IPC分类号： C23C16/00 ,  H01J37/32

CPC分类号： H01J37/32935 ,  H01J2237/0206

摘要： According to the present invention, since the inside of a hole formed in a sidewall of a process vessel of a plasma processing unit is filled with a dielectric, a propagation rate of the electromagnetic wave to a pickup antenna is improved when an electromagnetic wave generated due to abnormality in plasma such as abnormal discharge is to be detected via the hole. Accordingly, it is possible to improve detection sensitivity without any change in size or length of the hole. Consequently, abnormal discharge in plasma processing can be detected with high accuracy.

摘要翻译： 根据本发明，由于形成在等离子体处理单元的处理容器的侧壁中的孔的内部填充有电介质，所以当产生的电磁波产生时，电磁波到拾取天线的传播速率得到改善 通过孔检测异常放电等离子体的异常。 因此，可以提高检测灵敏度，而不会改变孔的尺寸或长度。 因此，可以高精度地检测等离子体处理中的异常放电。

公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。