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    Plasma Processing Apparatus and Plasma Processing Method
    2.
    发明申请
    Plasma Processing Apparatus and Plasma Processing Method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20070264441A1

    公开(公告)日：2007-11-15

    申请号：US10589272

    申请日：2005-02-15

    申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

    发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

    IPC分类号： C08F2/46 ,  C23C16/00

    CPC分类号： H01J37/32192 ,  H01J37/32238

    摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.

    摘要翻译： 通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。 在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与 透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。 在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。

    PLASMA PROCESSING APPARATUS
    7.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体加工设备

    公开(公告)号：US20110024048A1

    公开(公告)日：2011-02-03

    申请号：US12935392

    申请日：2009-03-31

    申请人： Hideo Nakamura ,  Jun Yamashita ,  Junichi Kitagawa ,  Yoshiro Kabe ,  Yoshinori Fukuda

    发明人： Hideo Nakamura ,  Jun Yamashita ,  Junichi Kitagawa ,  Yoshiro Kabe ,  Yoshinori Fukuda

    IPC分类号： H01L21/306 ,  C23F1/08 ,  C23C16/00

    CPC分类号： H01J37/32623 ,  H01J37/32091 ,  H01J37/32559 ,  H01J37/32633

    摘要： In a plasma oxidation processing apparatus (100) which supplies a high-frequency bias power to an electrode (7) embedded in a stage (5), the interior surface, which is to be exposed to a plasma, of an aluminum lid (27) which functions as an opposite electrode for the stage (5) is coated with a silicon film (48) as a protective film. Positioned adjacent to the silicon film (48), an upper liner (49a) and a thicker lower liner (49b) are provided on the interior surfaces of a second container (3) and a first container (2). This prevents a short circuit or abnormal electrical discharge to the interior surfaces, making it possible to form a proper high-frequency current path and enhance the efficiency of power consumption.

    摘要翻译： 在等离子体氧化处理装置（100）中，该等离子体氧化处理装置（100）向嵌入在载物台（5）中的电极（7）提供高频偏置功率，即将暴露于等离子体的铝表面（27） ）作为用于载物台（5）的相对电极，被涂覆有作为保护膜的硅膜（48）。 在第二容器（3）和第一容器（2）的内表面上设置有邻近硅膜（48）的上衬垫（49a）和较厚的下衬套（49b）。 这防止了内部表面的短路或异常放电，使得可以形成适当的高频电流路径并提高功耗的效率。

    Plasma processing apparatus and plasma processing method
    8.
    发明授权
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US08852389B2

    公开(公告)日：2014-10-07

    申请号：US13233082

    申请日：2011-09-15

    申请人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

    发明人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

    CPC分类号： H01J37/32192

    摘要： There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

    摘要翻译： 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置，并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成，并且用作与安装台5内的电极7对置的面对电极，其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极（面对电极表面积/偏置电极面积）的表面积的比率在约1至约5的范围内。

    Plasma processing apparatus
    9.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US08882962B2

    公开(公告)日：2014-11-11

    申请号：US13075557

    申请日：2011-03-30

    申请人： Jun Yamashita ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

    发明人： Jun Yamashita ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/44 ,  H01J37/32 ,  C23C16/509 ,  C23C16/455

    CPC分类号： H01J37/32559 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32192

    摘要： Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

    摘要翻译： 提供了一种等离子体处理装置，其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜，优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此，防止了不期望的短路和异常放电，并且形成稳定的高频电流路径。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    10.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20120067845A1

    公开(公告)日：2012-03-22

    申请号：US13233082

    申请日：2011-09-15

    申请人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

    发明人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

    IPC分类号： H01L21/3065 ,  H01L21/306

    CPC分类号： H01J37/32192

    摘要： There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

    摘要翻译： 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置，并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成，并且用作与安装台5内的电极7对置的面对电极，其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极（面对电极表面积/偏置电极面积）的表面积的比率在约1至约5的范围内。