发明授权
- 专利标题: Light emitting device and method for manufacturing the same
- 专利标题(中): 发光元件及其制造方法
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申请号: US13429623申请日: 2012-03-26
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公开(公告)号: US09029875B2公开(公告)日: 2015-05-12
- 发明人: Jong Ho Na , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
- 申请人: Jong Ho Na , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
- 申请人地址: KR Seoul
- 专利权人: LG Innotek Co., Ltd.
- 当前专利权人: LG Innotek Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: KED & Associates, LLP
- 优先权: KR10-2011-0026980 20110325; KR10-2011-0028964 20110330; KR10-2011-0071146 20110718; KR10-2012-0010626 20120202
- 主分类号: H01L27/15
- IPC分类号: H01L27/15 ; H01L29/167 ; H01L31/12 ; H01L33/00 ; H01L33/06 ; H01L33/32
摘要:
Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.